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BNC E-news for the week of December 9th
by Anthrop, Heather L 06 Dec '13

06 Dec '13

All Users Meeting Ariba Engineering Video Contest Physical Facilities Notice Preliminary Exam All Users Meeting The all User Meeting is scheduled for the dates below: Tuesday, January 21, 2014 7:00 PM-8:00 PM Lily Hall 1-105 Wednesday, January 22, 2014 7:00 PM-8:00 PM Lily Hall 1-105 Please attend either of the sessions. Failure to do so will result in suspension from the labs and cleanroom. Stephen E. Jurss CIH, CSP Safety Manager Ariba Message to anyone who orders in Ariba: Effective immediately please use the following naming convention for the Title when ordering in Ariba. BRK/PI(Professor last name)/REQUESTER NAME/ACCT/VENDOR This will enable us to have the necessary information for approval without actually going through several screens to find the information we need. This will expedite the approval, receipt, and reconciliation process. Thank you very much for your help on this!! Donna Brown BNC Business Manager Engineering Video Contest To Purdue Engineers - Let's show the world what Purdue engineers can do! In celebration of its upcoming 50th anniversary, the NAE is launching Engineering for You (E4U), a video contest to highlight the impact that engineering has or will have on society. In the last 50 years, engineering achievements include helping to land astronauts on the moon, creating the Internet, and decoding the human genome. What will engineering create in the next 50 years? Rev up your creativity, pull out your camera or phone, and produce a one to two minute video showing the world how you see engineering enhancing quality of life and serving the needs of society. The video must highlight a period during the years 1964-2064. The main prize is $25,000, and the contest will run from Nov. 1, 2013, to March 31, 2014. www.e4uvideocontest.org<http://www.e4uvideocontest.org/> --- Leah H. Jamieson The John A. Edwardson Dean, College of Engineering Ransburg Distinguished Professor of Electrical and Computer Engineering Neil Armstrong Hall +1 765 494 5346 701 West Stadium Avenue +1 765 494 9321 (fax) Purdue University West Lafayette, IN 47907-2045 lhj(a)purdue.edu<mailto:lhj@purdue.edu> https://engineering.purdue.edu/Engr<http://www.ece.purdue.edu/~lhj> Physical Facilities Notice Physical Facilities recently began a new desk-side recycling and trash collection process. Now, all office waste can be disposed of in the blue desk-side receptacles by putting anything recyclable (paper, cans, bottles) in one section, and non-recyclables (food waste, snack wrappers, facial tissues, napkins and restroom hand towels) in the other. Preliminary Exam Sansik Kim Monday, December 9th at 3:00 pm Birck 2001 Design and implementation of Plasmonic Nanocavity Arrays and Their Applications We investigate and design metal nanostructures with a novel functionality that can be observed under plasmonic resonance. First, we demonstrate high resonant absorption of visible light with a plasmonic nanocavity array fabricated through resistless nanoimprinting in metal (RNIM) method. The nanocavities are shown to be efficiently excited using normally incident light, and the resonant wavelength can be controlled by cavity dimensions. Numerical simulations confirm the experimental observations and illustrate the insensitivity to incident angle. The resonant absorption is due to the excitation of a localized metal-insulator-metal cavity mode. The interacting surface waves allow cavity lengths on the order of ten nanometers for light having a free space wavelength of about four hundred nanometers. Second, we present the design concept of an angle-insensitive optical filter, which is composed of a metal-dielectric multilayer stack. The non-trivial phase shift at the metal-dielectric interface allows a Fabry-Pérot resonance at subwavelength scale and introduces angular insensitivity. The central passband wavelength can be tuned from UV to visible or longer wavelength, by engineering the dielectric thickness and selecting metallic components with appropriate plasma frequency. Finally, we propose two other potential plasmonic devices for the applications of a silicon waveguide polarization beam splitter and nanotweezers. Initial progress of these works are presented.

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Ariba Downtime
by Anthrop, Heather L 03 Dec '13

03 Dec '13

Ariba will be down from Friday, December 6th at 6:00 pm through Monday, December 9th at 8:00 am for scheduled maintenance. If you have any questions or concerns please contact Donna Brown, Birck Business Manager.

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Annual Alll User Meeting
by Jurss, Stephen E 02 Dec '13

02 Dec '13

Users, The all User Meeting is scheduled for the dates below: Tuesday, January 21, 2014 7:00 PM-8:00 PM Lilly Hall 1-105 Wednesday, January 22, 2014 7:00 PM-8:00 PM Lilly Hall 1-105 Please attend either of the sessions. Failure to do so will result in suspension from the labs and cleanroom. Stephen Stephen E. Jurss CIH, CSP Safety Manager Birck Nanotechnology Center 1205 W. State Street West Lafayette, IN 47907 Tx: 765-496-8337 E-mail: sejurss(a)purdue.edu<mailto:sejurss@purdue.edu>

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Annual All User Meeting (First Notice)
by Jurss, Stephen E 02 Dec '13

02 Dec '13

Users, The all User Meeting is scheduled for the dates below: Tuesday, January 21, 2014 7:00 PM-8:00 PM Lily Hall 1-105 Wednesday, January 22, 2014 7:00 PM-8:00 PM Lily Hall 1-105 Please attend either of the sessions. Failure to do so will result in suspension from the labs and cleanroom. Stephen Stephen E. Jurss CIH, CSP Safety Manager Birck Nanotechnology Center 1205 W. State Street West Lafayette, IN 47907 Tx: 765-496-8337 E-mail: sejurss(a)purdue.edu<mailto:sejurss@purdue.edu>

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BNC E-new for the week of Nov. 25th
by Anthrop, Heather L 22 Nov '13

22 Nov '13

Final Exam NSAC Tip of the Week University Holiday Final Exam Saumitra Mehrota Monday, November 25th Birck 2001 at 9:00 am Physics and Simulation Study of Nanoscale Electronic Devices Silicon based complementary metal-oxide-semiconductor (CMOS) technology has seen continuous scaling of device dimensions for past three decades. There is a lot of focus on incorporating different high mobility channel materials and new device architectures for post-Si CMOS logic technology, making it a multifaceted problem. In this thesis the multiple challenges concerning new CMOS technologies are addressed. (1) High electron mobility III-V's are projected to be a material of choice for post-Si CMOS logic. These low electron mass materials suffer from the 'DOS bottleneck' issue. Transistor designs based on using mixed Γ-L valleys for electron transport are proposed to overcome the density of states (DOS) bottleneck. Improved current density over Si is demonstrated in GaAs/AlAsSb, GaSb/AlAsSb, and Ge-oninsulator-based single gate thin-body n-channel transistors. (2) Ge is a candidate material for p-channel transistors. Nano patterning of Ge/SiGe leads to Ge nanofins with both uniaxial and biaxial strain components, making it a device architecture design problem. Fully atomistic simulations involving molecular dynamics based relaxation for strain relaxation; tight-binding based bandstructure calculations and a linearized Boltzmann transport model for mobility calculations are performed. Final phonon mobility calculations reveal nearly 3.5 X improvements compared to biaxial strained Ge in Ge nanofins with width reduction.(3) Finally, a critical question that has to do with scaling is - How small a useful MOS transistor can be? As transistor channel lengths (Lg) are scaled to lengths shorter than Lg<8 nm, direct source-drain tunneling starts to limit the transistor operation. The scaling approaches needed in this tunneling dominated regime are presented using atomistic quantum mechanical simulations. NSAC Tip of the Week Clothing and PPE. + Enclosed Shoes + Long Pants or Skirt + Safety Glasses required in all Labs Except non Hood use Labs. University Holiday Purdue University will be closed Thursday, November 28th and Friday, November 29th in observance of the Thanksgiving holiday.

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Power Outage at Birck
by Reger, Ronald K 18 Nov '13

18 Nov '13

Dear All Birck Colleagues - On Sunday afternoon at approximately 3:15 pm a severe storm came through West Lafayette resulting in a power outage across campus, including the Birck Nanotechnology Center. Members of the engineering and facility staffs came in to secure research equipment and building systems. The outage lasted slightly more than one hour, and most systems were affected in some way. The staff is working to restore all processing equipment including cyro-pump regeneration, heating element ramp-ups, safety purges, etc. We will have the equipment available as soon as possible. Please check Coral for equipment availability. Thanks, BNC Engineering and Facility Management

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BNC e-news for the week of Nov. 18th
by Anthrop, Heather L 15 Nov '13

15 Nov '13

Grant NSAC Coffee Hour NSAC Tip of the Week Seminar Travel Grant Dear Colleagues, See the call below from NCI for grant applications on technology development with low and middle income countries. If you are not yet interacting with an LMI country, we have connections with several LMI countries for cancer research (among others, Lebanon, Ghana and Uruguay). Best regards, Sophie Lelievre Associate director, collaborative science, Purdue University Center for Cancer Research This Funding Opportunity Announcement (FOA) is a new initiative to support the development of cancer-relevant technologies suitable for use in low- and middle-income countries (LMICs). Specifically, the FOA solicits applications for projects to adapt, apply, and validate existing or emerging technologies into a new generation of user-friendly, low-cost devices or assays that are clinically comparable to currently used technologies for imaging, in vitro detection/diagnosis, or treatment of cancers in humans living in LMICs. Funds will be made available through the UH2/UH3 phased innovation cooperative agreement award mechanism. Applicants should have a working assay or prototype (not necessarily already capable of cancer applications). The initial 2-year (or shorter) UH2 exploratory phase will be a feasibility study to demonstrate technical functionality and clinical potential for use in LMIC settings by meeting specific performance milestones. UH2 projects that have met their milestones will be administratively considered by NCI and prioritized for transition to the UH3 validation phase. UH3 awards will support improvements and validations of the technologies in the LMIC settings. The project period for the UH3 phase is up to 3 years. Projects proposed in response to this FOA will require multidisciplinary efforts to succeed and therefore all applicant teams must include expertise in engineering/assay/treatment development, oncology, global healthcare delivery, and business development. Investigators responding to this FOA must address both UH2 and UH3 phases. NSAC Coffee Hour Rahim Rahimi Birck Atrium Friday, November 22nd at 3:30 pm A low-cost, flexible electrochemical sensor for monitoring silver ion concentration in alginate wound dressings Rahim Rahimi is a PhD student in Prof. Ziaie's group. His research interests include the development of low-cost electrochemical sensors and flexible soft actuators for wound healing applications. NSAC Tip of the Week If users are careless and don't follow procedures and break any equipment or contaminate it, their advisor will be charged for the staff time needed to re-train the student. We realize mistakes happen and this is part of the learning process, but repeated gross negligence will result in retraining charges Seminar NNSA PRISM Seminar Series Vu Dinh Purdue University -Department of Mathematics Friday, November 22nd at 12:00 pm, Birck 2001 Effective sampling schemes for behavior discrimination in nonlinear ODE systems More information can be found at http://www.purdue.edu/discoverypark/prism/ Travel We are starting to see several trips that are being booked along with their reimbursements in the Concur system so we think most people have been able to attend training. During the implementation period, we have been processing travel reimbursements with paper form 25's or through Concur, but we will need to migrate completely to Concur by November 22. This date will coincide pretty closely with the last date that Travel will be able to accept paper form 25's. Please contact your departmental Business Manager if you have any concerns about any training needs that might exist. We have staff in the Business Office who are happy to assist you and provide individual training resources as you book a trip or prepare the expenditure report. Sincerely, Christy Christy Haddock Director of Financial Affairs Office of the Vice President for Research and Discovery Park 765-494-1642 cjhaddock(a)purdue.edu<mailto:cjhaddock@purdue.edu>

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NSAC Coffee Hour Presentation
by Anthrop, Heather L 08 Nov '13

08 Nov '13

Today's coffee hour presentation will be by Nithin Raghunathan. Please join Nithin and NSAC in the Birck atrium at 3:30 pm

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BNC E-news for the week of Nov. 11th
by Anthrop, Heather L 08 Nov '13

08 Nov '13

FedEx Final Exam NSAC Coffee Hour Presentation NSAC Tip of the Week Room Reservation Seminar Travel FedEx Everyone, Please note that Purdue is going to be using a new Fed-Ex number starting November 15th, 2013. If you are using old Fed-ex forms, please make sure to not use then after November 15th. To get new ones, please come to BRK 1220 or order more through the MMDC website. Any questions, please let Lorraine Fox (4-4491) or myself know. Thank you, Mary Jo Totten Final Exam Sahil Bansal Birck 2001 at 8:00 am November 11 Top Down Approaches to Fabricate nanowire Based Novel Electronics Devices As the end of the silicon CMOS technology roadmap approaches there is a need to explore alternative device structures to continue to push computational ability. In this work we have chosen nanowires as our basic device structure and we present a top-down approach that we have developed and used to fabricate nanowires on various substrates including Silicon-on-Insulator (SOI), Silicon-on-Sapphire (SOS) and Germanium-on-Insulator (GOI) substrates. We present the experimental results of back gated and some top-gated nanowire devices fabricated on these substrates. The silicon nanowires fabricated using our top-down approach were used to convert them into Silicon-Carbide nanowires using a CVD process involving the breakdown of Silane, similar to the CVD process used to fabricate large area graphene on Silicon-Carbide substrates. We present the electrical results backed up by TEM images on this work. We have also explored the possibility of band-to-band tunneling in nanowire transistors and present novel nanowire device structures with associated energy band diagrams that can be used to make nanowire Haejun Chung Birck 1099 at 12:00 pm November 11th Time Domain Simulation of Novel Photovoltaic Materials Thin-film silicon-based solar cells have operated far from the Shockley-Queisser limit in all experiments to date. Novel light-trapping structures, however, may help address this limitation. Finite-difference time domain simulation methods offer the potential to accurately determine the light-trapping potential of arbitrary dielectric structures, but suffer from materials modeling problems. In this thesis, existing dispersion models for novel photovoltaic materials will be reviewed, and a novel dispersion model, known as the quadratic complex rational function (QCRF), will be proposed. It has the advantage of accurately fitting experimental semiconductor dielectric values over a wide bandwidth in a numerically stable fashion. Applying the proposed dispersion model, a statistically correlated surface texturing method will be suggested, and light absorption rates of it will be explained. In future work, these designs will be combined with other structures and optimized to help guide future experiments. Vinh Quang Diep Birck 1001 at 9:00 am November 12th Spin Nano-switches: Physics and Applications Complementary metal-oxide semiconductor(CMOS) has been very successful from the scaling of its dimension over the years which results in the improvement the performances of the devices. However, it has been recognized that one of the biggest obstacles to continued downscaling is the heat dissipated. This has led to an intensive search for alternative switches that could potentially provide improvement or add new functionalities to CMOS devices. On the other hand there has been enormous progress in spintronics and nanomagnetics that is greatly influencing memory devices, and it seems natural to ask if this progress could be harnessed for logic devices as well. The objective of this thesis is three-fold. The first is to describe a general paradigm for combining Read and Write units for memory devices into switches having CMOS transistor-like characteristics. Such switches could be used to build logic circuits without the need of any external circuits or amplification. The second is to evaluate these spinbased switches for conventional Boolean logic applications, and possible new materials and phenomena for Write and Read units that are needed to provide improvement over standard CMOS switches. The third is to evaluate spin switches for non-Boolean applications, based on neurons and synapses comparing them to CMOS-based ones in term of power and area consumption. NSAC Coffee Hour Presentation This week's coffee hour presentation will be by Fernando Pastrana. Fernando is a Visiting Scholar at Purdue and PhD student at Andes University in Colombia. He is a Medical Doctor with MSc in Biomedical Science and enrolled in PhD program at Engineering School of Electric and Electronics at Andes University. Fernando will be presenting a poster on Safety protocols: Development for handling nano materials at research scenarios. Brick Atrium at 3:30 pm. NSAC Tip of the Week Procedural Violations This violation corresponds to those that can cause delays in research due to the necessity of cleaning, fixing and/or decontamination of equipment that has been mistreated. This violation has four warnings: a. First safety violations, the user will be reminded of the proper procedure and verbally corrected immediately b. Second violation then they will be issued a corrective e-mail by the Process and Equipment Manager, c. Third violation will be notify to the user and Faculty Advisor d. Fourth violations will result in some period of expulsion from the labs and/or cleanroom Room Reservation For users who do not have Purdue exchange accounts, our conference room wizard calendars can be viewed at the following links: BRK 1001: http://brk1001rw.ecn.purdue.edu BRK 1024: http://brk1024rw.ecn.purdue.edu BRK 1099: http://brk1099rw.ecn.purdue.edu BRK 1201: http://brk1201rw.ecn.purdue.edu BRK 1290: http://brk1290rw.ecn.purdue.edu BRK 2001: http://brk2001rw.ecn.purdue.edu BRK 2024: http://brk2024rw.ecn.purdue.edu BRK 2290: http://brk2290rw.ecn.purdue.edu Angie Sigo Secretary, Skywalk Atrium Birck Nanotechnology Center Phone: 765-496-8327 Email: angie(a)purdue.edu<mailto:angie@purdue.edu> Seminar Dr. Chih-Kang Shih Monday, November 11th at 10:30 am PHYS 242 Quantum control of metal/semiconductor hybrid systems: from atomic layer superconductivity to deep sub-diffraction nanolasers For more information please visit: http://calendar.science.purdue.edu/physics/seminars/d11/11/2013/adpop/6?add… Dr. Paul Hommert Tuesday, November 12th at 3:00 pm MRGN 121 Research and Technologies for National Security: A Perspective from a National Security Laboratory Dr. Paul Hommert is the director of Sandia National Laboratories and president of Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, which operates Sandia for the U.S. Department of Energy's National Nuclear Security Administration. Dr. Hommert earned a BS degree cum laude in mechanical engineering from Rensselaer Polytechnic Institute and MS and PhD degrees in mechanical engineering from Purdue University. He received an Outstanding Alumnus Award for Professional Excellence in 2003 from Purdue's School of Mechanical Engineering and a Distinguished Engineering Alumni Award in 2010 from Purdue's College of Engineering. In 2013, Dr. Hommert was named Laboratory Director of the Year by the Federal Laboratory Consortium for his support of Sandia's technology transfer activities. The award recognizes federal laboratories and their industry partners for outstanding technology transfer efforts and has become one of the most prestigious honors in technology transfer. RSVP to: Cindy Ream, Discovery park, Engagement Operations Manager cream(a)purdue.edu<mailto:cream@purdue.edu> or (765) 494 -0015 Travel We are starting to see several trips that are being booked along with their reimbursements in the Concur system so we think most people have been able to attend training. During the implementation period, we have been processing travel reimbursements with paper form 25's or through Concur, but we will need to migrate completely to Concur by November 22. This date will coincide pretty closely with the last date that Travel will be able to accept paper form 25's. Please contact your departmental Business Manager if you have any concerns about any training needs that might exist. We have staff in the Business Office who are happy to assist you and provide individual training resources as you book a trip or prepare the expenditure report. Sincerely, Christy Christy Haddock Director of Financial Affairs Office of the Vice President for Research and Discovery Park 765-494-1642 cjhaddock(a)purdue.edu<mailto:cjhaddock@purdue.edu>

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Prof. Mark Brongersma Lecture on Nanophotonics, Nov. 6 (Wed), 2pm @ BRK 2001
by Mikhail Shalaginov 06 Nov '13

06 Nov '13

*Mark L. Brongersma, * *Professor and Keck Faculty Scholar * *in the Department of Materials Science and Engineering * *at Stanford University* * * *LECTURE "NANOSCALE PHOTON MANAGEMENT FOR SOLAR ENERGY HARVESTING"***** * * *Wednesday, November 6, 2013 2:00 – 3:00 p.m. @ BRK 2001 *Please find more details about the lecture and the speaker in the attached poster.* * The event is organised by OSA Purdue Student Chapter and sponsored by OSA. Best regards, -- Mikhail Y. Shalaginov PhD student Research assistant Purdue University Birck Nanotechnology Center 1205 West State Street West Lafayette, IN 47907-2057 tel: +1 765 496 3350; fax: +1 765 496 2018 email: shalaginov(a)purdue.edu http://web.ics.purdue.edu/~mshalagi/

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