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[Mentoring_at_Purdue] December Newsletter
by Alexander, Elizabeth M 10 Dec '18

10 Dec '18

Good morning! Take a quick break from this hectic season by reading the latest Mentoring@Purdue Newsletter. Inside this issue: -Meet our Invited Lecture Series Speaker, Dr. Stacy Blake-Beard -Information about the Summer Scholars Program application and deadline -Where to find the M@P Resource Guide ...and more! On behalf of the M@P team, Liz Liz Alexander Graduate Research Assistant Coordinator of On-Campus Activities Mentoring@Purdue Department of Agricultural Sciences Education & Communication Purdue University Lilly Hall Rm. 4-401 915 W. State St. West Lafayette, IN 47907-2053 _______________________________________________ Mentoring_at_Purdue mailing list Mentoring_at_Purdue(a)lists.purdue.edu https://lists.purdue.edu/mailman/listinfo/mentoring_at_purdue

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FW: Keyence Demo - Tues 12/11 - BRK1290 - 2:30-4
by Turner, Jaime J 10 Dec '18

10 Dec '18

From: Black, Nancy Lee Sent: Monday, December 10, 2018 9:39 AM To: Turner, Jaime J <jjbiggs(a)purdue.edu> Subject: FW: Keyence Demo - Tues 12/11 - BRK1290 - 2:30-4 I forgot to mention it is from 2:30-4 Hello - A Keyence Microscope salesman will be here 2:30 - 4 on Tuesday Dec 11, tomorrow, in BRK 1290 to demonstrate a new microscope. He feels this will be very interesting and useful for many of you. Hope you can come. Please bring your samples with you. Thanks, Bill Rowe Nancy Black Secretary V BRK 2287 Birck Nanotechnology Center West Lafayette, IN 47907-2057 Phone: 765-494-8675 Fax: 765-494-4731 [cid:image001.png@01D45FEE.25638000]

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FW: Keyence Demo - Tues 12/11 - BRK1290
by Turner, Jaime J 10 Dec '18

10 Dec '18

Hello - A Keyence Microscope salesman will be here on Tuesday Dec 11, tomorrow, in BRK 1290 to demonstrate a new microscope. He feels this will be very interesting and useful for many of you. Hope you can come. Please bring your samples with you. Thanks, Bill Rowe Nancy Black Secretary V BRK 2287 Birck Nanotechnology Center West Lafayette, IN 47907-2057 Phone: 765-494-8675 Fax: 765-494-4731 [cid:image001.png@01D45FEE.25638000]

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Food in the kitchen
by Turner, Jaime J 07 Dec '18

07 Dec '18

Hi all, There is leftover au bon pain in the kitchen...Enjoy! Thanks! Jaime Turner Administrative Assistant to the Director Birck Nanotechnology Center | Room 1027 | W. Lafayette, IN Office: 765.494.3509 | Fax: 765.496.8383 | Email: jjturner(a)purdue.edu<mailto:jjturner@purdue.edu> ______________________________________________________________ [https://www.purdue.edu/brand/images/Purdue_University-150_Years_of_Giant_Le…] www.purdue.edu/giantleaps<http://www.purdue.edu/giantleaps>

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FW: Silicon Wafer Partial Cassettes, FZ, CZ, Thick and Thin Si and hard to find specs in stock in very small quantities
by Wirth, Justin C 07 Dec '18

07 Dec '18

Hi all, In case anyone is needing to order specialized wafers, University Wafer is advertising wafer specials for the month of December. Thanks, Justin From: Ramadoss, Koushik <kramado(a)purdue.edu> Sent: Friday, December 07, 2018 10:18 AM To: Wirth, Justin C <jcwirth(a)purdue.edu> Subject: Fw: Silicon Wafer Partial Cassettes, FZ, CZ, Thick and Thin Si and hard to find specs in stock in very small quantities Hi Justin, I got this mail from University wafers. Can you forward it to the Birck community so that researchers can take advantage of these offers ? Thanks Regards Koushik ________________________________ From: Chris <chris(a)universitysilicon.com<mailto:chris@universitysilicon.com>> Sent: Thursday, December 6, 2018 10:11 AM To: Ramadoss, Koushik Subject: Hello Koushik, Silicon Wafer Partial Cassettes, FZ, CZ, Thick and Thin Si and hard to find specs in stock in very small quantities Hello Koushik, Below is our December partial silicon wafer cassettes specials. Please let us know if you can use. If you cannot use, please forward to a researcher who can. If you don't see what you need, email us your specs. 1" Wafers Note: Surface -- P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that surface); Material -- CZ unless noted Note: Items sold in quantities of 25, unless noted Item Qty in Price Material Orient. Diam Thck Surf. Source Resistivity Comment Stock $/wafer (mm) (µm) Ocm D975 8 $ 44.70 n-type Si:P [100] 1" 475 ±10 E/E ITME FZ >500 {1,900--2,400} NO Flats, Soft cst 1978 13 $ 73.90 Intrinsic Si:- [111] ±0.5° 1" 1,000 P/E ITME FZ 14,000--30,000 NO Flats, Soft cst, Cassettes of 7, 6, 6 wafers L678 13 $ 78.08 p-type Si:B [100] 1" 3,000 P/E ITME 1--50 Prime, NO Flats, Individual cst, Group of 13 wafers G704 10 $ 208.60 p-type Si:B [111] ±0.5° 1" 50 ±10 P/P ITME 1--100 NO Flats, Soft cst 6179 1 $ 85.82 n-type Si:P [100] 1" 1,500 P/E ITME 1--20 Prime, NO Flats, Soft cst 2" Wafers Note: Surface -- P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that surface); Material -- CZ unless noted Note: Items sold in quantities of 25, unless noted Item Qty in Price Material Orient. Diam Thck Surf. Source Resistivity Comment Stock $/wafer (mm) (µm) Ocm 5580 10 $ 66.16 p-type Si:B [110] ±0.5° 2" 279 P/E ITME FZ >1,000 2Flats, hard cst V822 4 $ 77.48 p-type Si:B [100] 2" 300 P/E ITME FZ 2,800--3,300 SEMI Prime, 1Flat, hard cst, TTV<7µm D769 8 $ 48.87 p-type Si:B [111] ±0.5° 2" 500 P/P ITME FZ 5,000--6,500 SEMI Test (in unsealed cassette), 1Flat L609 5 $ 73.90 p-type Si:B [111] ±0.5° 2" 275 P/E ITME FZ 3,000--5,000 SEMI Prime, 1Flat, Lifetime>2,000µs, in hard cassettes of 5 wafers E542 6 $ 72.41 p-type Si:B [111] ±0.5° 2" 275 P/P ITME FZ 1--10 SEMI Prime, 1Flat, hard cst 2894 13 $ 88.80 n-type Si:P [110] 2" 900 P/E ITME FZ 130--350 SEMI Prime, 1Flat, hard cst 4032 8 $ 89.40 n-type Si:P [110] ±0.5° 2" 900 P/E ITME FZ 50--100 SEMI Prime, hard cst, Primary Flat only at [111]±0.5° F550 5 $ 56.62 n-type Si:P [100] 2" 300 P/E ITME FZ >600 SEMI Prime, 2Flats, hard cst O392 10 $ 44.10 n-type Si:P [100] 2" 300 P/E ITME FZ >600 {1,400--2,000} SEMI Prime, 2Flats, hard cst 9936 5 $ 53.64 n-type Si:P [100] 2" 200 P/P ITME FZ 500--1,000 SEMI, 2Flats, in hard ccassettes of 4, 5 & 5 wafers B973 1 $ 149.00 n-type Si:P [100] 2" 225 P/P ITME FZ >100 SEMI, 2Flats, Individual cst, 1 very deep scratch E780 9 $ 47.68 n-type Si:P [111] ±0.5° 2" 280 P/P ITME FZ 2,000--4,000 SEMI Prime, 1Flat, hard cst, TTV<5µm 3710 11 $ 141.55 Intrinsic Si:- [110] ±0.5° 2" 275 P/E ITME FZ >20,000 SEMI Prime, 1Flat, hard cst I952 4 $ 163.90 Intrinsic Si:- [100] 2" 200 P/P ITME FZ >10,000 SEMI Prime, 1Flat, hard cst 6109 12 $ 35.76 p-type Si:B [100-4.0° towards[110]] ±0.5° 2" 400 P/E ITME 7.8--8.9 SEMI Prime, 2Flats, hard cst, TTV<5µm 5097 10 $ 35.16 p-type Si:B [100] 2" 250 P/P ITME 1--5 SEMI Prime, 1Flat, hard cst F708 5 $ 87.31 p-type Si:B [100] 40mm 250 P/E ITME 1--100 SEMI Prime, 1Flat, Soft cst 3037 10 $ 52.45 p-type Si:Ga [100] 2" 350 P/P ITME 1--5 SEMI Prime, 2Flats, hard cst N610 14 $ 27.42 p-type Si:B [100] 2" 280 P/P ITME 0.4--0.6 SEMI Prime, 2Flats, hard cst 5995 15 $ 34.27 p-type Si:B [100] 2" 300 P/E ITME 0.016--0.017 Prime, NO Flats, hard cst H995 4 $ 62.58 p-type Si:B [100] 2" 300 P/E ITME 0.016--0.017 Prime, NO Flats, hard cst T154 3 $ 47.68 p-type Si:B [100] 2" 250 P/P ITME 0.015--0.020 SEMI Prime, 1Flat, hard cst F918 10 $ 29.20 p-type Si:B [100] 2" 280 P/P ITME 0.015--0.020 Prime, NO Flats, hard cst 5264 10 $ 44.10 p-type Si:B [100] 2" 250 P/P ITME 0.01--0.02 SEMI Prime, 2Flats, hard cst, TTV<5µm D570 10 $ 56.32 p-type Si:B [100] 2" 250 P/P ITME 0.01--0.02 SEMI Prime, 1Flat, hard cst, TTV<5µm H607 15 $ 42.32 p-type Si:B [100] 2" 525 P/P ITME <0.01 {0.0076--0.0078} SEMI Prime, 2Flats, in hard cassettes of 5 wafers. J096 15 $ 48.57 p-type Si:B [111-10° towards[112]] 2" 280 P/E ITME 0.5--0.6 SEMI Prime, 1Flat, hard cst I096 7 $ 53.04 p-type Si:B [111] ±0.5° 2" 280 P/E ITME 0.1--1.0 SEMI Prime, 1Flat, hard cst N609 11 $ 102.51 p-type Si:B [111] ±0.5° 2" 3,000 P/E ITME 0.01--0.10 SEMI Prime, 1Flat, Individual cst 5348 18 $ 39.34 p-type Si:B [111] 2" 500 P/P ITME 0.003--0.005 Prime, 2 Flats (2nd @ 45°), hard cst 4820 10 $ 51.26 p-type Si:B [111] 2" 1,000 P/E ITME 0.001--0.005 SEMI Prime, 1Flat, hard cst 5533 10 $ 48.87 p-type Si:B [111] ±0.5° 2" 500 P/P ITME <0.01 SEMI Prime, 1Flat, hard cst 5596 10 $ 48.87 p-type Si:B [111] ±0.5° 2" 500 P/P ITME <0.01 {0.00087--0.00100} SEMI Prime, 1Flat, hard cst H031 5 $ 60.20 n-type Si:P [110] 2" 280 P/E ITME 19--33 SEMI Prime, 2Flats, hard cst P763 3 $ 138.27 n-type Si:Sb [110] 2" 375 P/E ITME 0.005--0.020 SEMI, 1Flat, hard cst R243 15 $ 50.36 n-type Si:P [100] 2" 400 P/P ITME 210--880 SEMI Prime, 2Flats, hard cst 3034 7 $ 29.80 n-type Si:P [100] 2" 500 P/P ITME 5--10 SEMI Prime, 2Flats, hard cst F857 12 $ 53.64 n-type Si:P [100] 2" 300 P/P ITME 0.8--1.0 SEMI Prime, 2Flats, hard cst 4501 2 $ 149.00 n-type Si:As [100] 2" 7,050 P/E ITME 0.0031--0.0038 SEMI Prime, 2Flats, Individual cst Group of 2 wafers 2039 8 $ 37.25 n-type Si:As [100] 2" 420 ±15 P/P ITME 0.001--0.005 {0.0030--0.0034} SEMI Prime, 2Flats, in Empak Cassettes of 3 & 5 wafers 4765 2 $ 132.61 n-type Si:P [111] ±0.5° 2" 5,000 P/E ITME >20 Prime, NO Flats, Individual cst, Group of 2 wafers 5238 6 $ 108.03 n-type Si:P [111] 2" 5,000 P/E ITME 15--20 SEMI Prime, 1Flat, Individual cst, (group of 6 wafers) 2901 5 $ 51.85 n-type Si:P [111] ±0.5° 2" 500 P/E ITME 10--12 SEMI Prime, 2Flats, hard cst 2995 3 $ 69.73 n-type Si:P [111-3°] ±0.5° 2" 600 P/E ITME ~10 SEMI Prime, 1Flat, TTV<3µm, hard cst S5855 8 $ 33.97 n-type Si:P [111] ±0.5° 2" 500 P/P SPC 2.8--10.0 SEMI Prime, hard cst F384 4 $ 63.18 n-type Si:P [111] 2" 275 P/P ITME 2.5--3.5 SEMI Prime, 2Flats, hard cst N763 8 $ 26.22 n-type Si:P [111] 2" 500 P/E ITME 2.2--3.8 SEMI Prime, 2Flats, hard cst G031 4 $ 69.14 n-type Si:P [111] 2" 500 P/E ITME 1--10 SEMI Prime, 2Flats, hard cst 4878 1 $ 131.42 n-type Si:P [111] ±0.5° 2" 6,000 P/E ITME 1--10 SEMI Prime, 1Flat, Individual cst Q962 5 $ 35.76 n-type Si:Sb [111-3.5°] ±0.5° 2" 300 P/E ITME 0.05--0.09 SEMI Prime, 2Flats, in hard cassettes of 5 & 8 wafers 4958 6 $ 143.34 n-type Si:Sb [111] 2" 2,900 P/P ITME 0.013--0.015 Prime, NO Flats, Individual cst 9358 50 $ 14.60 n-type Si:Sb [111-2.5°] ±0.5° 2" 280 P/E ITME 0.012--0.017 SEMI, 2Flats, hard cst 3" Wafers Note: Surface -- P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that surface); Material -- CZ unless noted Note: Items sold in quantities of 25, unless noted Item Qty in Price Material Orient. Diam Thck Surf. Source Resistivity Comment Stock $/wafer (mm) (µm) Ocm L978 3 $ 100.72 p-type Si:B [111] ±0.5° 3" 380 P/E ITME FZ 8,000--10,000 SEMI TEST (has scratches), 1Flat, in hard cst M942 5 $ 89.10 p-type Si:B [111] ±0.5° 3" 475 P/E ITME FZ >4,400 SEMI Prime, 1Flat, Empak cst, TTV<5µm S5554 4 $ 87.17 p-type Si:B [111] ±0.25° 3" 400 P/E SPC FZ >100 SEMI Prime, 1Flat, Empak cst F421 9 $ 88.80 n-type Si:P [100] 3" 300 P/P ITME FZ 45--52 SEMI Prime, 2Flats, in Empak cassettes of 3 wafers C987 6 $ 67.94 n-type Si:P [100] 3" 300 P/E ITME FZ 0.8--2.5 SEMI Prime, 2Flats, Empak cst, Back side originally polished but has scratches, Front is Epi--Ready G116 6 $ 58.41 n-type Si:P [111] ±0.5° 3" 415 ±15 E/E ITME FZ 10,000--12,000 SEMI Prime, 1Flat, in Empak, Lifetime>1,500µs J116 2 $ 59.60 n-type Si:P [111] ±0.5° 3" 415 ±15 BROKEN ITME FZ 10,000--12,000 Broken E/E wafers, in two pieces, 1Flat, Lifetime>1,500µs, I978 3 $ 143.93 n-type Si:P [111] ±0.5° 3" 380 P/E ITME FZ 4,000--8,000 SEMI Prime, 1Flat, in hard cassettes of 1 & 2 wafers K978 1 $ 74.50 n-type Si:P [111] ±0.5° 3" 380 BROKEN ITME FZ 4,000--8,000 Broken P/E wafer, 1Flat, Soft cst E383 10 $ 75.10 n-type Si:P [111] ±0.5° 3" 380 P/E ITME FZ 3,000--5,000 SEMI Prime, 1Flat, in Empak, Lifetime>1,000µs, 6101 1 $ 368.33 Intrinsic Si:- [100] 3" 4,000 P/P ITME FZ >8,000 Test, Scratched, 1Flat, Individual cst K593 8 $ 132.31 Intrinsic Si:- [111] ±0.5° 3" 380 P/P ITME FZ >20,000 SEMI Prime, 1Flat, Empak cst, Lifetime>1,460µs, also includes 2 extra scratched wafers at no charge (10 total in cassette) I667 5 $ 116.22 p-type Si:B [110] ±0.5° 3" 380 P/E ITME >100 SEMI Prime, Primary Flat @ [111], Secondary @ [111] 70.5° from Primary, in hard cassettes of 1, 2 & 2 wafers 6325 9 $ 29.20 p-type Si:B [100] 3" 380 P/E ITME 1--10 SEMI Prime, 2Flats, Empak cst 5901 5 $ 57.81 p-type Si:B [100] 3" 950 P/P ITME 1--10 SEMI Prime, 2Flats, Empak cst 4864 1 $ 141.55 p-type Si:B [100] 3" 5,000 P/E ITME 1--20 {6--8} SEMI Prime, 2Flats, Individual cst 6116 10 $ 131.42 p-type Si:B [100] 3" 5,000 P/E ITME 1--30 Prime, NO Flats, Individual cst 3014 3 $ 37.25 p-type Si:B [100] 3" 250 P/E ITME 0.15--0.20 SEMI TEST (Scratches), 2Flats, in sealed Empak cassettes of 3 wafers G989 1 $ 74.50 p-type Si:B [100] 3" 380 P/P ITME 0.01--0.02 SEMI Prime, 2Flats, Empak cst 3366 10 $ 154.36 p-type Si:B [5,5,12] ±0.5° 3" 380 P/E ITME 1--10 SEMI Prime, 1Flat, Empak cst 5008 17 $ 60.20 p-type Si:B [111] 3" 250 P/E ITME 0.001--0.002 SEMI Prime, 1Flat, Empak cst 6026 8 $ 29.80 n-type Si:P [100] 3" 350 P/P ITME 1--5 SEMI Prime, 2Flats, Empak cst 6308 8 $ 133.50 n-type Si:P [100] 3" 6,000 P/E ITME 1--20 SEMI Prime, 1Flat, Individual cst J763 6 $ 74.50 n-type Si:Sb [100] 3" 300 P/E ITME 0.02--0.04 SEMI Prime, 2Flats, in hard cassettes of 2 wafers 1263 5 $ 78.67 n-type Si:P [111] ±0.5° 3" 1,400 P/E ITME 25--35 SEMI Prime, 1Flat, in single wafer cassettes, sealed in groups of 5 6198 5 $ 147.81 n-type Si:P [111] 3" 3,000 P/E ITME 10--20 SEMI Prime, 2Flats, Individual cst, Groups of 2 + 3 wafers 2256 5 $ 37.25 n-type Si:Sb [111] ±0.5° 3" 380 P/E ITME 0.019--0.026 SEMI Prime, 2Flats, in Empak cassettes of 5 wafers 6431 7 $ 117.11 n-type Si:As [111] ±0.5° 3" 320 P/P ITME 0.001--0.005 SEMI Prime, 2Flats, Empak cst, TTV<5µm E380 10 $ 29.20 n-type Si:As [111-4°] ±0.5° 3" 380 P/E ITME 0.001--0.005 SEMI Prime, 2Flats, Empak cst 4" Wafers Note: Surface -- P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that surface); Material -- CZ unless noted Note: Items sold in quantities of 25, unless noted Item Qty in Price Material Orient. Diam Thck Surf. Source Resistivity Comment Stock $/wafer (mm) (µm) Ocm 6268 14 $ 216.05 p-type Si:B [110] ±0.5° 4" 500 P/E ITME FZ >10,000 Prime, 2Flats, Empak cst, TTV<5µm H585 14 $ 155.56 p-type Si:B [110] ±0.5° 4" 200 P/P ITME FZ 1--2 Prime, 2Flats, Empak cst I585 9 $ 162.11 p-type Si:B [110] ±0.5° 4" 200 P/P ITME FZ 1--2 SEMI Prime, 2Flats, Empak cst, Extra 8 scratched wafers in cassette free of charge 6269 14 $ 95.36 p-type Si:B [100-4° towards[110]] ±0.5° 4" 525 P/E ITME FZ >2,000 SEMI Prime, 2Flats, Empak cst, TTV<5µm 6288 11 $ 155.56 p-type Si:B [100] 4" 200 ±10 P/P CSW FZ 100--120 SEMI Prime, 1Flat, Empak cst 6100 4 $ 150.19 p-type Si:B [100-6.0° towards[111]] ±0.5° 4" 350 P/P CSW FZ 1--10 SEMI Prime, 2Flats, Empak cst B400 12 $ 178.80 n-type Si:P [110] ±0.5° 4" 500 P/P ITME FZ 5,000--15,000 SEMI Prime, 2Flats -- Primary @ <111>±0.5° -- edge unrounded, Secondary @ <111>. 70.5° CCW from Primary, in Empak cassette Lifetime>6,000µs 5630 4 $ 186.25 n-type Si:P [100] 4" 400 ±10 P/P Pluto FZ 6,000--8,000 SEMI Prime, 2Flats, Empak cst, TTV<5µm H411 2 $ 220.52 n-type Si:P [100] 4" 380 P/E ITME FZ 5,000--10,000 SEMI Prime, 1Flat, Lifetime>1,000µs, in Empak cassettes of 2 wafers J724 7 $ 71.52 n-type Si:P [100] 4" 425 C/C CSW FZ >5,000 2Flats (p--type flats on n--type wafers), Empak cst 2355 4 $ 156.75 n-type Si:P [100-1.5° towards[110]] ±0.5° 4" 525 P/E SemPro FZ >5,000 SEMI Prime, 2Flats, Lifetime>980µs, in Empak G050 14 $ 29.80 n-type Si:P [100] 4" 525 P/E ITME FZ 4,200--8,000 SEMI TEST (Bad Surface & Chips), Lifetime>1,400µs, 1Flat, in Empak cassettes of 7 & 7 wafers E180 13 $ 70.03 n-type Si:P [100] ±0.2° 4" 380 ±10 P/E ATC FZ >3,500 SEMI TEST (in opened Empak cst), 1 Flat 2454 6 $ 132.31 n-type Si:P [100] 4" 400 P/E SPC FZ 2,000--6,500 SEMI Prime, 2Flats, Empak cst, Lifetime>1,000µs S6284 1 $ 339.72 n-type Si:P [100] ±1° 4" 200 ±10 P/P SPC FZ >1,000 SEMI Prime, 1Flat, TTV<1µm, in Empak cst E290 9 $ 29.80 n-type Si:P [100] 4" 200 ±10 BROKEN Pluto FZ 800--1,500 Broken P/E wafers, in various size pieces, Lifetime >1,000µs 5625 15 $ 67.35 n-type Si:P [100] 4" 500 P/P ITME FZ 400--1,000 SEMI Prime, 1Flat, Empak cst, TTV<5µm 5543 9 $ 66.75 n-type Si:P [100] 4" 500 P/P ITME FZ 198--200 SEMI Prime, 1Flat, Empak cst G843 5 $ 118.60 n-type Si:P [100] 4" 300 P/P ITME FZ 1.2--2.0 SEMI Prime, 2Flats, MCC Lifetime (370--420)µs, Empak cst 6099 13 $ 119.20 n-type Si:P [100-6°] ±0.5° 4" 350 P/P CSW FZ 1--10 SEMI Prime, 2Flats, Empak cst C976 5 $ 119.20 n-type Si:P [100-4° towards[111]] ±0.5° 4" 525 P/E ITME FZ 1--10 {3.2--4.0} SEMI Prime, 2Flats, Lifetime: ~500µs, in Empak cassettes of 5 wafers K845 3 $ 221.71 n-type Si:P [111] ±0.25° 4" 675 P/E ITME FZ 10,000--20,000 SEMI TEST (Light scratches), 1Flat, Lifetime>1,000µs, Empak cst, 1679 7 $ 133.50 n-type Si:P [111] ±0.5° 4" 630 P/G SPC FZ >7,000 SEMI Prime, 1Flat, in Empak, Lifetime>1,000µs, Back--side Fine Ground B465 8 $ 111.75 n-type Si:P [111] ±0.5° 4" 675 P/E SPC FZ >7,000 SEMI, 1Flat, Lifetime>1,600µs, in Empak cassettes of 6 and 8 wafers D465 13 $ 133.80 n-type Si:P [111] ±0.5° 4" 675 P/E SPC FZ >7,000 SEMI, 1Flat, in Empak, Lifetime>1,600µs E465 1 $ 146.02 n-type Si:P [111] ±0.5° 4" 675 P/E SPC FZ >7,000 SEMI TEST (Scratches, in Unsealed Empak cassette), 1Flat, Lifetime>1,600µs G845 1 $ 206.81 n-type Si:P [111] ±0.25° 4" 675 P/E ITME FZ 7,000--10,000 SEMI Prime, 1Flat, in Empak, Lifetime>1,000µs, Light scratches D852 1 $ 147.51 n-type Si:P [111-1° towards[110]] ±0.5° 4" 525 P/E ITME FZ >5,000 SEMI TEST (scratches on back--side), 1Flat, Empak cst D850 5 $ 114.43 n-type Si:P [111] ±0.25° 4" 675 P/E ITME FZ 5,000--7,000 SEMI Prime, 1Flat, in Empak, Lifetime>1,000µs F845 1 $ 147.51 n-type Si:P [111] ±0.25° 4" 675 P/E ITME FZ 5,000--7,000 SEMI TEST (light scratches), 1Flat, Lifetime>1,000µs, in Empak G773 5 $ 118.90 n-type Si:P [111] ±0.5° 4" 525 P/P SPC FZ >3,000 SEMI Prime, 2Flats, Lifetime>1,000µs, in Empak cassettes of 5, & 10 wafers L845 4 $ 146.02 n-type Si:P [111] ±0.25° 4" 525 P/E ITME FZ 3,000--5,000 SEMI Prime, 1Flat, in Empak cassettes of 3, 3 & 4 wafers M845 2 $ 118.90 n-type Si:P [111] ±0.25° 4" 525 P/E ITME FZ 3,000--5,000 SEMI TEST (light scratches), 1Flat, Empak cst I192 5 $ 96.85 n-type Si:P [111] ±0.5° 4" 290 ±10 P/P CSW FZ 2,500--3,500 SEMI TEST (Surface defects), 2Flats, Empak cst F278 6 $ 89.10 n-type Si:P [111] ±1° 4" 380 P/E CEMAT FZ 2,000--3,000 SEMI Prime, 1Flat, TTV<5µm, Lifetime>1,000µs, in Epak cassettes of 6 wafers D717 9 $ 72.41 n-type Si:P [111] ±0.5° 4" 525 P/E ITME FZ 1,500--3,000 SEMI Prime, 1Flat, in Empak, Lifetime>1,100µs D236 10 $ 126.05 n-type Si:P [111] ±0.5° 4" 525 P/E ITME FZ 430--550 SEMI Prime, 1Flat, Empak cst, TTV<7µm 5739 10 $ 113.24 n-type Si:P [112-5° towards[11-1]] ±0.5° 4" 765 P/P SPC FZ ~100 SEMI Prime, 1Flat, Empak cst, TTV<3µm B987 11 $ 143.04 n-type Si:P [112-5° towards[11-1]] ±0.5° 4" 795 E/E SPC FZ >100 SEMI, 1Flat, in Empak, TTV<4µm, Lifetime>2,000µs K184 12 $ 131.12 Intrinsic Si:- [110] 4" 500 P/P CSW FZ >20,000 SEMI Test (Both sides with defects), 2Flats @ [111] -- Secondary 70.5° CCW from Primary, Empak cst D260 5 $ 102.51 Intrinsic Si:- [110] ±0.5° 4" 500 P/E CSW FZ >15,000 Test, Small Surface Defects, 2Flats, Empak cst D301 5 $ 275.65 Intrinsic Si:- [100] 4" 500 P/P CSW FZ >30,000 SEMI Prime, 1Flat, Empak cst, TTV<1µm F301 5 $ 245.85 Intrinsic Si:- [100] 4" 500 P/P CSW FZ >30,000 SEMI Prime, 1Flat, Empak cst, TTV<2µm, Groups of 5 wafers C356 6 $ 208.30 Intrinsic Si:- [100] 4" 500 P/P CSW FZ >20,000 SEMI Prime, 1Flat, Empak cst, TTV<2µm I693 4 $ 141.55 Intrinsic Si:- [100] 4" 500 P/P CSW FZ >20,000 SEMI Test, 1Flat, Empak cst, TTV<3µm, Scratches on both sides C310 5 $ 260.75 Intrinsic Si:- [100] 4" 510 ±5 P/P CSW FZ >20,000 SEMI Prime, 1Flat, Empak cst, TTV<1µm F103 10 $ 260.75 Intrinsic Si:- [100] 4" 525 P/P CSW FZ >20,000 SEMI Prime, 1Flat, Empak cst, TTV<1µm G103 13 $ 216.05 Intrinsic Si:- [100] 4" 525 P/P CSW FZ >20,000 SEMI Prime, 1Flat, Empak cst, TTV<2µm S962 5 $ 566.20 Intrinsic Si:- [100] 4" 525 P/P CSW FZ >20,000 SEMI Prime, 1Flat, Empak cst, Super Low TTV<0.3µm over entire wafer L765 5 $ 147.21 Intrinsic Si:- [100] 4" 675 P/P CSW FZ >20,000 SEMI Prime, 1Flat, Empak cst, TTV<3µm J146 7 $ 275.95 Intrinsic Si:- [100] 4" 1,000 P/P CSW FZ >20,000 Prime, 1Flat, Empak cst K297 5 $ 275.65 Intrinsic Si:- [100] 4" 1,000 P/P CSW due 12/28 FZ >20,000 SEMI Prime, 1Flat, Empak cst G444 4 $ 186.25 Intrinsic Si:- [100] 4" 300 P/E ITME FZ 16,000--20,000 SEMI Prime, 1Flat, Empak cst, Back--side polish is imperfect L330 1 $ 250.32 Intrinsic Si:- [100] 4" 500 P/E CSW FZ 13,000--20,000 SEMI Prime, 1Flat, Empak cst, TTV<5µm, Front--side Prime polish, Back--side light polish E775 4 $ 178.80 Intrinsic Si:- [100] 4" 615 ±10 C/C CSW FZ >10,000 SEMI Prime, 1Flat, Empak cst R698 4 $ 163.60 Intrinsic Si:- [111] ±0.5° 4" 500 P/E ITME FZ >20,000 SEMI Prime, 1Flat, Empak cst, Extra 3 free non--prime wafers included with 4 prime wafers D636 9 $ 148.40 p-type Si:B [110] ±0.5° 4" 750 P/E CSW 1--100 SEMI Prime (back--side polished but not Prime), 2Flats, Empak cst, TTV<5µm, Bow/Warp<10µm 6243 10 $ 98.64 p-type Si:B [100] 4" 1,000 P/P ITME 200--700 Prime, NO Flats, Empak cst 5584 6 $ 100.72 p-type Si:B [100] 4" 3,000 P/E ITME 46--50 SEMI Prime, 1Flat, Individual cst, Group of 6 wafers I808 4 $ 74.50 p-type Si:B [100] 4" 500 P/P Prolog 10--20 SEMI Prime, 2Flats, in single wafer cassettes, can be ordered singly G511 2 $ 37.25 p-type Si:B [100] 4" 300 P/P ITME 8--12 SEMI TEST -- Front--side badly polished, 2Flats, Empak cst S5762 9 $ 14.90 p-type Si:B [100] 4" 610 ±10 E/E CEMAT 8--12 1Flat at [100], Empak cst 6274 243 $ 29.20 p-type Si:B [100] 4" 300 P/P Topsil 5--10 SEMI Prime, 2Flats, Empak cst F060 4 $ 29.80 p-type Si:B [100] 4" 300 P/P CSW 5--10 SEMI Test, 2Flats, Empak cst, Scratched and unsealed. Can be re--polished for extra fee F994 9 $ 29.80 p-type Si:B [100] 4" 300 P/P Topsil 5--10 {6--7} SEMI Prime, 2Flats, Empak cst, TTV<9µm, Cassettes of 9 + 15 wafers 5727 2 $ 59.60 p-type Si:B [100] 4" 380 P/E Prolog 5--10 SEMI TEST (in Opened cassette), 2Flats, Empak cst C649 1 $ 29.80 p-type Si:B [100] 4" 380 P/E Prolog 5--10 SEMI TEST (with bad surface), 1Flat, Empak cst D819 1 $ 74.50 p-type Si:B [100] 4" 380 P/E Prolog 5--10 SEMI Prime, 1Flat, hard cst, Back--side slightly darker than normal E326 6 $ 44.70 p-type Si:B [100] 4" 525 P/E Topsil 5--10 SEMI Prime, 1Flat, Empak cst, TTV<4µm, Bow<15µm, Warp<30µm, Cassettes of 6 and 11 wafers 6273 10 $ 64.96 p-type Si:B [100-4.0°] ±0.5° 4" 275 P/E ITME 1--30 SEMI Prime, 1Flat, Empak cst, TTV<5µm E485 3 $ 44.70 p-type Si:B [100-4° towards[110]] ±0.5° 4" 300 P/E ITME 1--10 SEMI Test, 2Flats, Empak cst, Wafers with pits M334 3 $ 74.50 p-type Si:B [100] 4" 381 ±5 P/P CSW 1--30 SEMI Prime, 2Flats, TTV<5µm, Bow<8µm, Warp<20µm, Empak cst G189 7 $ 44.70 p-type Si:B [100] 4" 475 P/E ITME 1--10 SEMI Prime, 2Flats, Empak cst, Epi edges for 150µm epi growth K440 7 $ 44.70 p-type Si:B [100] 4" 500 P/P Prolog 1--50 SEMI Prime, 2Flats, in Empak cst, Carbon content (0.9--1.1)E16/cc per ASTM F1319, Oxygen content (8.4--8.0)E17/cc per ASTM F1188. 6200 15 $ 59.00 p-type Si:B [100-4° towards[110]] ±0.5° 4" 525 P/E ITME 1--20 SEMI Prime, 2Flats, Empak cst, TTV<5µm F485 8 $ 119.20 p-type Si:B [100] 4" 525 P/E ITME 1--20 Spotted defect wafers with three layers of SiO2 and Ge via Electron Beam Evaporation, 2Flats, Empak cst J302 5 $ 146.02 p-type Si:B [100] 4" 600 P/P CSW 1--50 SEMI Prime, 1Flat, Empak cst, TTV<1µm 6347 16 $ 73.61 p-type Si:B [100] 4" 1,200 P/P ITME 1--15 SEMI Prime, 2Flats, Empak cst N347 4 $ 73.61 p-type Si:B [100] 4" 1,200 P/P ITME 1--15 Prime, 1Flat, Empak cst 3996 7 $ 89.40 p-type Si:B [100] 4" 3,000 P/E ITME 1--100 SEMI Prime, 1Flat, Individual cst, Groups of 7 and 10 wafers 6058 10 $ 89.40 p-type Si:B [100] 4" 3,000 P/E ITME 1--30 SEMI, 2Flats, Individual cst 2586 9 $ 89.40 p-type Si:B [100] 4" 3,200 P/E ITME 1--100 SEMI Prime, 1Flat, Individual cst, Sealed as group of 9 wafers S5006 5 $ 74.20 p-type Si:B [100] ±0.2° 4" 300 P/P Umicor 0.1--0.3 SEMI Prime, 2Flats, Empak cst 2612 3 $ 74.50 p-type Si:B [100] 4" 350 P/E ITME 0.095--0.130 SEMI Prime, 2Flats, Empak cst I304 2 $ 117.41 p-type Si:B [100] 4" 350 P/E ITME 0.074--0.075 SEMI Prime, 2Flats, Empak cst T155 10 $ 82.70 p-type Si:B [100] 4" 525 P/POx Proces 0.008--0.020 SEMI Prime, 2Flats, Empak cst 5419 3 $ 44.10 p-type Si:B [100] 4" 300 P/P ITME 0.001--0.005 SEMI Test, 2Flats, Empak cst, Both sides with scratches L419 1 $ 133.80 p-type Si:B [100] 4" 300 P/P ITME 0.001--0.005 SEMI Prime, 2Flats, Empak cst K173 1 $ 74.50 p-type Si:B [100] 4" 525 BROKEN Panmen 0.001--0.005 Broken wafer (shattered into many pieces), 1Flat S5774 1 $ 74.50 p-type Si:B [100] 4" ? P/P SPC ? SEMI Test, 2Flats, Empak cst D939 25 $ 38.14 p-type Si:B [100] 4" 375 P/E ElmaT <0.0015 {0.00091--0.00099} SEMI Prime, 1Flat, Empak cst, TTV<3µm I374 15 $ 38.74 p-type Si:B [111] 4" 350 P/E ITME 2--3 Prime, NO Flats, Empak cst L620 10 $ 93.57 p-type Si:B [111] 4" 1,000 P/P ITME 1--10 SEMI Prime, 1Flat, Empak cst, Cassettes of 10 and 10 wafers M620 7 $ 93.57 p-type Si:B [111] 4" 1,000 P/P ITME 1--10 SEMI Prime, 1Flat, Empak cst D677 7 $ 44.10 p-type Si:B [111] ±0.5° 4" 1,000 P/E Prolog 1--10 SEMI Prime, 1Flat E891 7 $ 44.70 p-type Si:B [111] ±0.5° 4" 525 P/P Prolog 0.2--1.0 SEMI Prime, 1Flat, in Empak cassettes of 6, 7 & 7 wafers D372 13 $ 63.18 p-type Si:B [111-3°] 4" 400 P/E ITME 0.015--0.018 SEMI Prime, 1Flat, Empak cst 1223 5 $ 74.50 p-type Si:B [111-3°] ±0.5° 4" 525 P/E ITME 0.002--0.016 SEMI Prime, 1Flat, in Empak cassettes of 4, 5 & 5 wafers G538 7 $ 62.58 n-type Si:P [110] ±0.5° 4" 500 P/P Prolog 3--10 SEMI Prime, TTV<10µm, Bow/ Warp<30µm, Primary Flat @ [111]±0.2°, Secondary @ [111] 70.5° CW from Primary, in Empak cassettes of 7 wafers H725 7 $ 59.60 n-type Si:P [110] ±0.3° 4" 525 P/P Prolog 3--10 SEMI Prime, TTV<10µm, Bow/ Warp<30µm, Primary Flat @ [111]±0.2°, Secondary @ [111] 70.5° CW from Primary, in Empak cassettes of 6 & 7 wafers J615 8 $ 56.62 n-type Si:P [110] ±0.2° 4" 525 P/E Topsil 3--10 SEMI Prime, Primary Flat @ <111>±0.2°, SF @ <111> 70.5° CW from PF, TTV<4µm Bow<15µm, Warp<30µm, Empak cst E024 13 $ 100.58 n-type Si:As [110] ±0.5° 4" 275 ±10 P/P ITME 0.001--0.005 SEMI Prime, 2Flats at [111] 70.5° apart, TTV<5µm, Empak cst S5002 8 $ 22.35 n-type Si:P [100] 4" 310 ±10 P/P Umicor 20--30 SEMI Test, 2Flats, Empak cst, Unsealed, Polished but dirty. Can be made prime for additional fee G827 7 $ 23.84 n-type Si:P [100] 4" 525 P/E Montco 10--30 SEMI, 2Flats, in Empak cassettes of 7 & 7 wafers 5337 11 $ 47.68 n-type Si:P [100-4° towards[111]] 4" 525 P/E ITME 9--11 SEMI Prime, 2Flats, Empak cst D830 8 $ 29.80 n-type Si:P [100] 4" 350 ±10 P/P Montco 3--5 SEMI Prime, 2Flats, Empak cst E830 8 $ 22.35 n-type Si:P [100] 4" 350 P/P Montco 3--5 SEMI Test, 2Flats, Empak cst, Haze, pits, scratches C925 5 $ 22.35 n-type Si:P [100] 4" 500 ±10 P/P Prolog 2--5 SEMI TEST (wafers have spots resembling water splashes, which do not come off), 2Flats, in hard cassettes of 4, 5 & 5 wafers S5920 2 $ 149.00 n-type Si:P [100] 4" 250 ±5 P/P SPC 1--100 SEMI Prime, TTV<3µm, Empak cst 5772 5 $ 37.25 n-type Si:P [100] ±0.2° 4" 400 ±10 P/P Umicor 1--3 SEMI Prime, 1Flat, Empak cst, TTV<5µm 5903 6 $ 44.10 n-type Si:P [100] 4" 400 P/E ITME 1--6 SEMI Prime, 2Flats, Empak cst S5763 11 $ 22.35 n-type Si:P [100] ±1° 4" 465 ±10 E/E CEMAT 1--3 SEMI, 1Flat, Empak cst 6246 11 $ 29.80 n-type Si:P [100] 4" 500 ±10 P/P CSW 1--100 SEMI, 2Flats, Empak cst 6134 7 $ 72.71 n-type Si:P [100] 4" 200 P/P ITME 0.10--0.15 SEMI Test, 2Flats, Empak cst, Not sealed both sides scratched H304 9 $ 51.26 n-type Si:Sb [100] 4" 525 P/E ITME 0.020--0.022 Prime, 2Flats, Empak cst 5899 10 $ 141.55 n-type Si:Sb [100] 4" 305 ±3 P/P CSW 0.010--0.025 SEMI Prime, 2Flats, Empak cst, TTV<1µm J304 5 $ 74.50 n-type Si:As [100] 4" 525 P/E ITME 0.0025--0.0035 SEMI Prime, 2Flats, Empak cst U671 15 $ 23.84 n-type Si:As [100] 4" 545 E/E CSW 0.002--0.004 SEMI, 1Flat, Empak cst 5677 13 $ 28.01 n-type Si:As [100] 4" 525 P/P Prolog 0.001--0.005 SEMI Prime, 1Flat, Empak cst F219 1 $ 74.50 n-type Si:As [100] 4" 525 P/E Prolog 0.001--0.005 SEMI Test (Chipped edge), 2Flats, Empak cst F562 3 $ 149.00 n-type Si:As [100] 4" 525 PlyAP/E ITME 0.001--0.005 With layer of Al2O3, ~0.1µm or ~0.05µm thick, Wafers with a matrix of Polycrystalline Silicon dots, Empak cst, $ - 4975 13 $ 223.50 n-type Si:Sb [211] ±0.5° 4" 1,500 ±15 P/P VirgSe 0.01--0.02 SEMI Prime, 1Flat, Empak cst, TTV<1µm F975 4 $ 178.80 n-type Si:Sb [211] ±0.5° 4" 1,600 C/C VirgSe 0.01--0.02 SEMI Test, 1Flat, Empak cst, Wafers can be polished for additional fee G925 4 $ 92.38 n-type Si:P [111] ±0.5° 4" 1,500 P/E ITME >20 {24--29} SEMI Prime, 2Flats, TTV<5µm, in Empak cassettes of 2 wafers 5637 11 $ 140.66 n-type Si:P [111] ±0.5° 4" 750 P/P CSW 1--100 SEMI Prime, 2Flats, Empak cst, TTV<5µm E677 4 $ 62.58 n-type Si:P [111] ±0.5° 4" 1,000 P/E Prolog 1--10 SEMI Prime, 2Flats, in Empak cassettes of 3, 3 & 4 wafers. F677 7 $ 59.60 n-type Si:P [111] ±0.5° 4" 1,000 P/E Prolog 1--10 SEMI Prime, 2Flats, Empak cst S5810 3 $ 78.97 n-type Si:P [111] ±1.0° 4" 525 P/E SPC 0.3--50.0 SEMI Prime, 2Flats, Empak cst 6433 5 $ 159.13 n-type Si:Sb [111-0.5° towards[-1,-1,2]] ±0.1° 4" 525 P/E CSW 0.01--0.02 SEMI Prime, 2Flats, Empak cst H151 2 $ 180.59 n-type Si:P [112] ±0.5° 4" 500 P/P SPC 11--15 SEMI Prime, 1Flat, in Empak cassettes of 2 wafers 6" Wafers Note: Surface -- P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that surface); Material -- CZ unless noted Note: Items sold in quantities of 25, unless noted Item Qty in Price Material Orient. Diam Thck Surf. Source Res Comment Stock $/wafer (mm) (µm) Ocm 6123 8 $ 349.85 p-type Si:B [100] 6" 350 P/P CSW FZ 2,700--3,250 SEMI Prime, 1Flat (57.5mm), Empak cst E700 10 $ 268.20 n-type Si:P [100-6° towards[111]] ±0.5° 6" 675 P/P Montco FZ >3,500 SEMI Prime, 1Flat (57.5mm), Empak cst M353 16 $ 147.21 n-type Si:P [100] 6" 500 ±10 P/P CSW FZ 50--70 SEMI Prime, 1Flat, Empak cst, With Lasermark 5325 5 $ 297.40 n-type Si:P [100] 6" 725 P/P CSW FZ 50--70 {57--62} SEMI Prime, 1Flat (57.5mm), Lifetime=15,799µs, Empak cst N445 7 $ 223.50 n-type Si:P [112-5.0° towards[11-1]] ±0.5° 6" 875 ±10 E/E Montco FZ >3,000 SEMI, 1Flat (47.5mm), TTV<4µm, Surface Chips E179 1 $ 149.00 Intrinsic Si:- [111] ±0.5° 6" 750 E/E Montco FZ >10,000 SEMI notch, TEST (defects, cannot be polished out), Empak cst L405 4 $ 146.32 p-type Si:B [100] 6" 1,000 P/P CSW 10--15 SEMI Prime, 1Flat (57.5mm), Empak cst, 4Priem wafers and 2 extra scratched wafers at no extra cost 5354 6 $ 216.05 p-type Si:B [100-9.7° towards[001]] ±0.1° 6" 525 P/P CSW 1--100 SEMI Prime, 1Flat (57.5mm), Empak cst N698 12 $ 41.72 p-type Si:B [100] 6" 675 P/E Prolog 1--100 SEMI Prime, 1Flat (57.5mm), Empak cst E770 12 $ 74.50 p-type Si:B [100-6° towards[111]] ±0.5° 6" 675 P/E CSW 0.01--0.02 SEMI Prime, 1Flat (57.5mm), Empak cst, Both sides polished but only front is Prime B728 13 $ 65.56 n-type Si:P [100] 6" 675 P/E MEMC 2.7--4.0 SEMI Prime, in Empak cassettes of 6 & 7 wafers H240 11 $ 134.10 n-type Si:P [100] 6" 725 P/P CSW 1--100 SEMI notch Prime, Empak cst, TTV<1µm S5913 1 $ 178.80 n-type Si:P [100] ±1° 6" 800 P/E SPC 1--10 SEMI Prime, 1Flat(57.5mm), Empak cst E089 2 $ 536.40 n-type Si:P [100] 6" 1,910 ±10 P/P CSW 1--100 SEMI Prime, 1Flat (57.5mm), TTV<2µm, in stacked trays of 2 wafers F089 1 $ 432.10 n-type Si:P [100] 6" 1,910 ±10 P/P CSW 1--100 SEMI Prime, 1Flat (57.5mm), TTV<5µm, in stacked trays of 1 wafer M176 3 $ 385.61 n-type Si:P [100] 6" 5,000 P/P CSW 1--25 SEMI Prime, NO Flats, in stacked trays of 3 wafers 5252 12 $ 119.20 n-type Si:Sb [100-6° towards[110]] ±0.5° 6" 675 P/P Prolog 0.01--0.02 SEMI Prime, 1Flat (57.5mm), Empak cst To exit reply BCGCSM-12418

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[NSAC] Inkscape and Blender Workshop
by Samuel Peana 07 Dec '18

07 Dec '18

Hi all, NSAC is hosting an introduction to Inkscape (2D Graphics Software) and Blender (3D Graphics Software) this Friday. This powerful software can take your publication images to the next level. This introduction will walk you through generating images with these softwares. Additionally there will be Pizza. Please bring your computer and a mouse to follow along with the tutorials! The schedule is as follows: 1-1:30pm Pizza + Installation of Inkscape and Blender 1:30 - 2Pm Interactive Introduction to Inkscape 2-2:15 Break + Q&A 2:15 - 2:45 Interactive Introduction to Blender 2:45 - 3:15 Q&A Please RSVP here: https://goo.gl/forms/XxhflWMo8pmOQxzT2 so we know how much Pizza to buy! Sincerely, -Sam Peana

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Preliminary Exam Invitation
by Turner, Jaime J 04 Dec '18

04 Dec '18

My Preliminary exam is scheduled next THU (6th Dec) 3:00pm at BRK2001. Could you please forward this invitation to the Birck Grad List on my behalf? Here is information about the work: Title: "Electromagnetic Techniques for Performance Enhancement of Wireless Systems" About the topic: In this study we use the theory of statistical electromagnetics and the electromagnetic time reversal to design a wireless power transfer system. The designed system is intended to operate in sealed reverberant environment and is capable of wirelessly transferring power to a selected location. One of the potential applications is to power wireless batteryless sensor networks used in Lyophilization. Looking forward to seeing you all. Thank you Ahmed

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The Yogurt Study
by Leidy Lab 04 Dec '18

04 Dec '18

Hello, We are still recruiting for the yogurt study. Below is more information if you are interested. Are there benefits to eating yogurt for breakfast? You can help answer this question by taking part in our study! You will be provided different types of yogurts to consume at home for breakfast. For each type of yogurt, you will complete a 4-h testing day that measures your feelings of appetite (hunger & fullness) and cognitive performance. If you qualify, you will be paid for completing all study procedures. For more information contact: leidylab(a)purdue.edu<mailto:leidylab@purdue.edu> and mention: The Yogurt Study. We plan to continue running the study into January of 2019; therefore, we can schedule you to complete the study in the upcoming semester if need be. Sincerely,? The Leidy Lab Department of Nutrition Science Purdue University 1151 Lyles-Porter Hall 715 Clinic Drive West Lafayette, IN 47907

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Dr. Bernard Kippelen Seminar: TODAY at 11am in BRK 1001
by Turner, Jaime J 03 Dec '18

03 Dec '18

Distinguished Birck Nanotechnology Center Seminar Series - Dr. Bernard Kippelen DECEMBER 3, 2018 11:00 AM - 12:00 PM BRK 1001 Organic Photonics and Electronics: the Endless Frontier Bio: Bernard Kippelen is the Joseph M. Pettit Professor of Electrical and Computer Engineering at the Georgia Institute of Technology, located in Atlanta, GA, USA. His research interests range from the investigation of fundamental physical processes (nonlinear optical activity, charge transport, light harvesting and emission) in organic-based nanostructured thin films, to the design, fabrication and testing of light-weight flexible optoelectronic devices based on hybrid printable materials. He is a co-founder and co-President of the Institut Lafayette, an innovation platform located on Georgia Tech's European campus Georgia Tech Lorraine (Metz, France), and serves as Director of the Center for Organic Photonics and Electronics on the Georgia Tech campus in Atlanta. Abstract: We live in a world in flux with technology changing at a pace unprecedented in human history. Over the past decade, a powerful wave of innovation based on digital platforms and apps has arisen due to their wider dissemination in our hyper-connected world. In the next decade, "deep" technologies will play a major role in pushing further the technological frontier. Deep-tech innovations lie at the crossroads of massive shifts in demand led by megatrends (such as global climate change, demographic shifts, resource scarcity) and scientific progress (such as the fusion of the physical, digital and biological domains). Deep technologies are disruptive solutions built around unique, protected or hard-to-reproduce technological or scientific advances. In that next wave of innovation, advances in new materials and processing methods will continue to play a central role. In this talk, we will discuss how printable organic conjugated semiconducting molecules and polymers are creating new disruptive technologies that are impacting all industries. We will present recent advances in various solid-state device platforms including, organic light-emitting diodes (OLEDs), organic photodetectors (OPDs), organic photovoltaic devices (OPVs), and organic thin-film transistors (OTFTs). We will emphasize the importance of interfaces in devices and show examples on how to engineer their electrical properties. We will present a simple processing technique for the electrical doping of organic semiconductors over a limited depth near the surface of the film that is based on immersing the film into a polyoxometalate solution [2]. Such approached can drastically reduce the fabrication cost of such devices, simplify device architecture, and lead to all-organic devices fabricated by all-additive printing techniques. As an illustration of the simplicity and versatility of this process we will discuss how high-performance organic solar cells with simplified architecture can be implemented. Finally, we will resent the results of a detailed operational lifetime study of OTFTs showing that organic photonics and electronics can yield a stability level superior to that of amorphous silicon [3]. References [1] Y. Zhou, C. Fuentes-Hernandez, J. Shim, J. Meyer, A. J. Giordano, H. Li, P. Winget, T. Papadopoulos, H. Cheun, J. Kim, M. Fenoll, A. Dindar, W. Haske, E. Najafabadi, H. Sojoudi, S. Barlow, S. Graham, J. L. Bredas, S. R. Marder, A. Kahn, and B. Kippelen "A universal method to produce low-work function electrodes for organic electronics," Science 336, 327-332 (2012). [2] V. A. Kolesov, C. Fuentes-Hernandez, N. Aizawa, F. A. Larrain, W. -F. Chou, M. Wang, A. Perrota, S. Choi, S. Graham, G. C. Bazan, T. -Q. Nguyen, S. R. Marder and B. Kippelen "Solution-based electrical doping of semiconducting polymer films over a limited depth," Nature Materials 16, 474-481 (2017). [4] J. Jia, C. Fuentes-Hernandez, C.Y. Wang, Y. Park, and B. Kippelen, "Stable organic thin-film transistors," Science Advances 4, eaao1705 Jan. (2018). Jaime Turner Administrative Assistant to the Director Birck Nanotechnology Center | Room 1027 | W. Lafayette, IN Office: 765.494.3509 | Fax: 765.496.8383 | Email: jjturner(a)purdue.edu<mailto:jjturner@purdue.edu> ______________________________________________________________ [https://www.purdue.edu/brand/images/Purdue_University-150_Years_of_Giant_Le…] www.purdue.edu/giantleaps<http://www.purdue.edu/giantleaps>

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Post Doc Opening in Oxide Electronics
by Turner, Jaime J 30 Nov '18

30 Nov '18

Post-doc opening in oxide electronics We anticipate an opening for a post-doctoral fellow in early 2019 in an exciting area related to correlated oxide electronics. The project involves thin film semiconductor growth and electronic transport measurements. This is a cutting-edge topic involving quantum materials and has relevance to emerging fields such as neuromorphic computing and robotics. Candidates with hands-on skills in deposition, lithography and device physics will be particularly suited. Interested candidates should contact Shriram Ramanathan (Shriram AT purdue DOT edu) for further details. Shriram Ramanathan 701 W. Stadium Ave Armstrong Hall of Engineering Purdue University, IN 47907 765-496-0546 off.

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