MATERIALS SCIENCE AND ENGINEERING SEMINAR MSE PhD Examination Part I A Model to Evaluate the Creep Rate Caused by Dislocation Bias Absorption in Dilute FCC Solution Under Irradiation Condition by: Shengxu Xia Co-Advisors: Prof. A. El-Azab and Prof. R. Trice ABSTRACT SIPA is an important mechanism responsible for irradiation damage that occurs in nuclear materials. SIPA comes from the bias absorption of interstitials towards dislocation sink. In order to minimize its effect, dilute solute is added to the solvent, hoping that the preferred interstitials would be trapped during the travel to dislocation sinks. However, recent study reveals the existence of dilute solute might facilitate SIPA effect rather than suppress. So it is necessary to build a theoretical model to consider both sides of solute atoms. This paper proposes such a model based on reaction-diffusion equation and effective capture radius of pure edge dislocation. Date: Thursday, August 21, 2014 Time: 1:30 PM Place: ARMS 1028 Lisa Stacey Secretary/Development Assistant Purdue University School of Materials Engineering 765/494-4100