Please consider attending the following: MATERIALS ENGINEERING SEMINAR "Strain-Engineered Bismuth-Based Oxide Thin Films for Multifunctionalities" By Han Wang Purdue MSE Ph.D. Final Exam Advisor: Professor Haiyan Wang ABSTRACT Multifunctional characteristics of Bismuth-based oxides offer great opportunities to design a variety of devices exploiting either a single functionality or the synergistic multifunctionalities. In the past decades, strain engineering of thin films arose as a solution for fabrication of novel structures with highly desired properties. In this thesis, strain engineering has been applied to Bismuth-based oxides to explore the strain effect on thin film structures and functionalities. BiFeO3 (BFO) servers as the first study platform, because of its strain-induced phase transition and the corresponding diverse polarization properties. The strain effect of SrRuO3 (SRO)-buffered substrates on ferroelectric and optical properties of BFO thin films has been investigated. A wide range of strain states have been achieved in BFO films. The ferroelectricity and bandgap have been effectively tuned even with partial strain relaxation. However, pure BFO suffers from high leakage current and large coercive field. To overcome these limitations, Sm-doped BFO (BSFO) systems emerged and has been used in controlling the microstructure and properties of BFO. Our detailed structure analysis proves the Sm doping amount in BSFO thin films can be tuned effectively via deposition temperature. Consequently, the Sm dopant influences phase formation of BSFO and the macroscopic ferroelectric properties. Another member in Bismuth-based oxide family, Bi2WO6 (BWO), has been selected as the base material for the design of the two-phase nanocomposites, because of its unique layered structure and ferroelectric property. To introduce ferromagnetic component into BWO, two methods have been explored. The first method incorporates Mn cations into the BWO matrix (BWMO), and the second method couples CoFe2O4 (CFO) as secondary phase with BWO to form a vertically aligned nanocomposite (VAN) system. Both systems exhibit robust ferromagnetic and ferroelectric response at room temperature and demonstrate their promise as room temperature multiferroics for future spintronics and memory applications. Date: Monday, June 3, 2019 Time: 1:000 P.M. Place: ARMS 1028