Please consider attending this seminar:
MATERIALS ENGINEERING
“Mechanisms Behind Magnetoelectric Multiferroic Thin Films”
By
Jianan Shen
Purdue MSE Preliminary Exam
Advisor: Professor Haiyan Wang
ABSTRACT
The phenomenon of multiferroics with simultaneous presence of two
ferroic orderings has raised great interest over the past decades owing to their scientific and technological importance. Triggered by the discovery of the first multiferroic material, Ni3B7O13I, the search for multiferroic
materials has expanded significantly. Although the pioneering work has been focusing on bulk multiferroic materials, multiferroic thin films have drawn increasing attention because of their promising potentials on device applications, such as multiferroic
4-state logic memories, magnetic field sensors, multiferroic tunneling junctions, magnetoelectric memories, etc. Multiferroic properties can be established on a single-phase material, and there are assorted mechanisms for single phase multiferroics. Nevertheless,
the family of single-phase materials remains small due to the fundamental contradiction between the electron configuration of d orbitals in ferroelectricity and ferromagnetism, and they are not yet usable for practical applications due to the low remnant magnetization
and weak magnetoelectric coupling between two orderings. Two-phase multiferroic nanocomposite combines ferroelectricity and ferromagnetism phase into one system and exhibits stronger magnetoelectric coupling through strain mediation, which makes it a more
viable and reliable material candidate for practical applications. This review first introduces the history and background of multiferroics, then discusses different mechanisms of multiferroic thin films as well as their pros and cons, finally identifies the
existing critical challenges, and proposes some future perspectives.
Date: November 12, 2021
Time: 1:00 PM
WebEx:
https://purdue.webex.com/purdue/j.php?MTID=mebb8a27f8e85d4e3183689fa0ae42932
Yuan-Yu Karen Morgan,Ph.D.
Academic Advisor-Graduate Program
School of Materials Engineering
Neil Armstrong Hall of Engineering, Room 2217
765-494-4103