Forwarding on behalf of Rosa E. Diaz, PhD, Research Assistant Faculty,

Elmore Family School of Electrical and Computer Engineering

Lisa Stacey
Lead Administrative Assistant
School of Materials Engineering

Neil Armstrong Hall of Engineering
o: 765-494-4095   f: 765-494-1204

Subject: Seminar at Birck Nanotechnology Center Friday Nov 15th at 1:30pm

Dear all, 

Dr. Will Hubbard is visiting Birck Nanotechnology Center this Friday to present his resent work on imaging current generation in electronic devices while observing the sample inside a scanning transmission electron microscope (STEM). This technique is called STEM - EBIC, and even though it has been widely used in SEMs in academic and research institutions, Dr. Hubbard's latest instrumentation developments have made possible to image high-resolution electronic contrast in the STEM. 

Please find the abstract bellow and the attached flyer for more information. 

When: Friday November 15th, 2024 @ 1:30 pm in BRK_1001
Zoom Link: https://purdue-edu.zoom.us/j/98487769216

Abstract: Transmission electron microscopy (TEM) excels at determining the physical structure and composition of samples down to the atomic scale. But device operation often involves electronic changes that do not coincide with any significant physical changes (e.g., gate biasing, driving a current, or storing charge). As a result, the processes underlying function and failure in electronic devices are often difficult, if not impossible, to detect in TEM. Scanning TEM electron beam induced current (STEM EBIC) imaging provides high-resolution electronic contrast as a complement to TEM's physical contrast. EBIC, generally, involves the measurement of current generated in a sample as it is scanned with an electron beam. It has been used to map electric fields in devices since the 1960’s and is typically performed in the scanning electron microscope (SEM). Recent advances in measurement sensitivity and sample preparation have rejuvenated the field of STEM EBIC, leading to the demonstration of new EBIC modes, atomic resolution EBIC, and operando STEM EBIC. In this presentation I will discuss different modes of current generation, compare SEM and STEM EBIC, and demonstrate STEM EBIC mapping of various electronic properties, including conductivity. I will then present examples of advanced STEM EBIC characterization of operating electronic devices ranging from modern commercial semiconductor components to next-generation memory systems.

Best wishes, 

Rosa E. Diaz, PhD

Research Assistant Faculty

Elmore Family School of Electrical and Computer Engineering

Birck Nanotechnology Center 

Purdue University

o: BRK1274, 1205 W State St, West Lafayatte, IN 47907

p: 765-494-1275 

Chat with me on Teams! 

*My workday my look different from your workday. Please be assured that I respect your working pattern and look forward to your response when you are next at work and able to reply.