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MATERIALS ENGINEERING

SEMINAR

“Perovskite Nickelate ReRAM for Next Generation Memory”

By

Michael Taejoon Park

Purdue MSE Preliminary Exam

Advisor: Professor Shriram Ramanathan

ABSTRACT

The traditional semiconductor memory device scaling based on Moore’s law is reaching fundamental limits. To overcome this scaling limit, alternative ways have been explored. Among potential candidates, Resistive Random-Access Memory (ReRAM) is one of great interest due to its scalability, low power consumption, and fast programming speed compared with the existing memory technology. ReRAM device uses materials including transition metal oxides that switch the resistance when an external bias is applied. This report summarizes the classification of ReRAM device based on resistive switching characteristics and the underlying mechanisms. Following that, perovskite rare-earth nickelates (RNiO3) as a promising candidate for ReRAM device are reviewed. These materials undergo distinctive metal-insulator phase transition caused by charge disproportionation when temperature decreases. In addition, electron doping through hydrogenation induces a more dramatic phase transition of the same nickelate system which give rise to resistance change by several orders of magnitude. The multi-level resistance states of hydrogen doped RNiO3 could be modulated by electric fields and it provides the potential for emerging memories.

Date: Tuesday, December 10, 2019

Time: 9:00 A.M.

Place: ARMS 1021