Dear all, Today's coffee hour will be from 3:30-4:00pm in the Birck Atrium. Today's presenter is Xingshu Sun. The title: "Channel Transmission Characteristics of Silicon Nanotransistors" Abstract: The drain and gate voltage dependent channel transmission, T(Vgs, Vds), plays a key role in determining the IV characteristics of nanoscale field-effect transistors. In this paper, we report measurements of T(Vgs, Vds) for n-channel Extremely Thin Silicon-On-Insulator (ETSOI) MOSFETs with channel lengths from 30 to 980 nm. The results confirm previously given estimates of for low and high drain bias. In addition, they also provide a complete description over the range of biases of interest. The results also show that for a given technology, the shape of T(Vgs, Vds) is independent of the channel length. Hope to see you all there. Best, Aveek Dutta Graduate Research Assistant Birck Nanotechnology Center Department of Electrical and Computer Engineering Purdue University