Dear All, I encourage you to attend two very interesting seminars below. Thanks for your time. Best regards, Ali ******************************************************** SEMINAR WEDNESDAY, May 2, 2012 1:15 P.M. ROOM BRK 2001 Current Status of Large-Scale InP Photonic Integrated Circuits Fred A. Kish Sr. Vice President, Optical Integrated Components Group Infinera Corporation Abstract The current state-of-the-art for large-scale InP photonic integrated circuits (PICs) is reviewed with a focus on the devices and technologies that are driving the commercial scaling of these highly integrated devices. Specifically, high-capacity dense wavelength division multiplexed (DWDM) transmitter and receiver photonic integrated circuits (PICs) are reviewed with a focus next generation devices: >500 Gb/s and 1 Tb/s coherent multi-channel transmitter and receiver InP PICs. These large-scale PICs integrate hundreds of devices onto a single monolithic InP chip and enable significant reductions in cost, packaging complexity, size, fiber coupling, and power consumption which enable benefits at the component and system level. Biography Fred A. Kish received his Ph.D. (1992) in electrical engineering from the University of Illinois at Urbana-Champaign. From 1992 to 1999, he was at Hewlett-Packard's Optoelectronics Division where he co-invented and led the commercialization of the highest performance (efficiency) red-orange-yellow visible LEDs produced to date with efficiencies exceeding halogen lamps. From 1999 to 2001, he was with Agilent Technologies Fiber Optics Components Division as the III-V Department Manager. There, he led the department that developed commercially viable 2.5 Gb/s vertical cavity surface-emitting lasers (VCSELs) and VCSEL/detector arrays (12 x 2.5 Gb/s) for next generation fiber-optic transceiver and the first parallel-optic transmitter/receiver products. In 2001, he joined Infinera as Vice President of Photonic Integrated Circuit (PIC) Department, and is now Sr. Vice President of the Optical Integrated Components Group. At Infinera, he co-invented and led the effort to develop the first practical (commercial) large-scale PICs. Dr. Kish's awards and recognition include: Fellow of the OSA and IEEE, the IEEE David Sarnoff Award, the IEEE LEOS Engineering Achievement Award, and the OSA Adolph Lomb Award. Prof. Andrew Weiner (amw@purdue.edu; 45574 is hosting Fred Kish. ******************************************************** BNC/ECE/MSE Seminar May 3rd, 2012 @ 1:30pm BRK, ROOM 2001 GaN, Graphene and Tunnel FETs Huili (Grace) Xing John Cardinal O'Hara CSC Associate Professor of Electrical Engineering University of Notre Dame Abstract In this talk, I will review the recent development of GaN electronics [1], graphene THz modulators [2] and tunnel field effect transistors (FETs) [3], three different topics, in our group. Our current research topics on GaN electronics include high-speed transistors, power switches, and THz devices based on an NDR-gated plasmonic channel to realize THz emission, detection and amplification. Graphene, an atomically thin 2D crystal with zero bandgap, has been touted for many intriguing applications, particularly for transparent touch screens and wearable electronics. Its optoelectronic properties are equally noteworthy. We successfully constructed THz modulators using graphene for the first time, another new avenue for graphene research. Tunnel FETs are promising replacements of Si-MOSFETs beyond 2020 due to their promise to achieve Ion/Ioff > 103 with Ion > 100 uA/um at low supply voltages (up to 0.5 V). To date we have demonstrated Ion/Ioff ~ 106, Ion ~ 50 uA/um. Challenges ahead include electrostatic control, defect-assisted tunneling and interface state density and parasitics. Biography Huili (Grace) Xing is currently the John Cardinal O'Hara CSC Associate Professor of Electrical Engineering at the University of Notre Dame. She obtained B.S. in physics from Peking University (1996), M.S. in Material Science from Lehigh University (1998) and Ph.D. in Electrical Engineering from University of California, Santa Barbara (2003), respectively. Her research focuses on development of III-V nitride and 2-D crystal semiconductor growth and (opto)electronic devices, especially the interplay between the material quality and device developments. More recent research interests include THz and bioelectronic applications. She is a recipient of AFOSR Young Investigator Award and NSF CAREER Award. ********************************************************