[BIRCK NANOTECHNOLOGY CENTER][http://www.purdue.edu/discoverypark/resources/toolkit/files/logo/digital/Log...] Seminars/Workshops Cell Culture Basics - 2 Days Hands-On Training Course November 16 & 17 Deadline for registration is Oct. 27, 2017 and December 11 & 12 Deadline for registration is Nov. 17, 2017 Course fee: $250 Questions Dr. Tim Kwok at kwokt@purdue.edu<mailto:kwokt@purdue.edu> or 765-494-6697 Taming amorphous oxides with ion beams to optimize optical interference coatings for demanding applications Carmen S. Menoni, Professor at Colorado State University, Department of Electrical and Computer Engineering Friday, November 10th 11:30 am Burton D. Morgan Center, Room 129 http://www.purdue.edu/discoverypark/birck/events/index.php?view=1171 Bioelectronic Devices for Personalized and Precision Medicine: From Wearable Biosensors to Medical Nanorobots Wei Gao, Assistant Professor of Medical Engineering, California Institute of Technology November 13 2:00 p.m. BRK 1001 http://www.purdue.edu/discoverypark/birck/events/index.php?view=1129 Bagwell X Tenth Honorary Lecture Counter-Intuitive Physics of Ballistic Transport in State of the Art Electronic Devices Michael Shur, Rensselaer Polytechnic Institute Friday, November 17 at 11:00 am - 12:00 pm Burton D. Morgan Rm 121 http://www.purdue.edu/discoverypark/birck/events/index.php?view=959 VISION TO VALUES Imaging Analysis Workshop Thursday, November 30th 8:30 am - 3 pm Dean's Auditorium, Pfendler Hall RSVP by November 21st at bindleybioscience@purdue.edu<mailto:bindleybioscience@purdue.edu> See other Discovery Park's Events: http://www.purdue.edu/discoverypark/events/index.php Professor Sabre Kais would like to announce CHM 696 Syllabus - Spring 2018 Graduate Research Assistantship Opportunity: Deposited Gate Oxides for SiC MOSFETs A graduate research assistantship is available in the area of silicon carbide metal-oxide-semiconductor (MOS) devices. SiC is a wide bandgap semiconductor with a high critical field, making it an exciting material for power electronic devices. SiC MOSFETs are now commercially available, but do not yet achieve their full potential. Our group is approaching this problem from several directions, including a new device geometry inspired by modern FinFETs, the adaptation of IGBTs and super-junctions for use in SiC devices, as well as alternative gate insulator fabrication methods. If interested send email to morisett@purdue.edu<mailto:morisett@purdue.edu> Status of laboratories link: http://status.iLab.agilent.com NSAC Coffee Hour Each Friday 3:30 pm in BRK Atrium https://engineering.purdue.edu/NSAC/activities/coffeehour NSAC Journal Club October 31 4:30 PM BNC Atrium