MONDAY MEMO, FEBRUARY 19, 2007 CONTENTS 1. Announcements 1.1: Lab Staff Availability Limited 02.19 to 02.22 1.2: EntrepreneurshipWeek USA; February 21-March 4, 2007 2. Faculty/Staff/Student Awards and Honors NONE 3. Seminar Announcements 3.1: Wednesday, 02.21.07, 2:00 PM; EE 317: ³Toward Improving the Precision of Nanoscale Force-Displacement Measurements² by Jason Clark, Assistant Professor, School of Electrical and Computer Engineering, School of Mechanical Engineering, Network of Computational Nanotechnology, Purdue University 3.2: Thursday, 02.22.07, 10:30 AM; BRK 1001: ³Heteroepitaxy on Nanoscale Substrates: Applications to Solid State Lightning and Vacuum Field Emission,² by Parijat Pramil Deb, Purdue University 3.3: Thursday, 02.22.07, 10:30 AM; EE 317: ³The Semiconductor Industry¹s Nanoelectronics Research Initiative: Motivation and Challenges,² by Jeff Welser, Director, SRC Nanoeclectronics Research Initiative, IBM Almaden Research Center 4. Workshops/Conferences NONE 5. Job/Fellowship opportunities NONE **************** 1. Announcements **************** 1.1: Lab Staff Availability, 02.19 to 02.22: John Weaver announced that ost of the engineering staff will be on a benchmarking trip this week. Although issues are not expected, a set of contingency plans has been put together. Please keep the following items in mind during this period: 1) If you have an equipment problem, please do not attempt to remedy it yourself. Wait until the appropriate staff member returns; 2) If you have a question that requires an immediate answer, please contact Dima Zemlyanov. He will be covering while others on the staff are gone; 3) Stocking and inventory issues can be handled by Jan Summers (Mary Jo¹s phone: 61173) or Aaron Riegle: 427-4859; 4) Facility issues are to be addressed to Kurt Stull: 41410. 1.2: EntrepreneurshipWeek USA; February 21-March 4, 2007. ³Try Big Ideas on for Size²; What¹s your BIG idea? Take it on! Visit http://www.entrepreneurshipweekusa.com/home-flash.asp for additional information. **************** 2. Awards/Honors **************** NONE ************************ 3. Seminar Announcements ************************ 3.2: Wednesday, 02.21.07, 2:00 PM; EE 317: ³Toward Improving the Precision of Nanoscale Force-Displacement Measurements² by Jason Clark, Assistant Professor, School of Electrical and Computer Engineering, School of Mechanical Engineering, Network of Computational Nanotechnology, Purdue University Abstract Nanotechnology has great potential for being used to create better medicines, materials, and sensors. With increasing interest in nanotechnology to improve the quality of our lives, there has been an increasing use of nanoscience tools to measure force and displacement to understand nanoscale phenomena. However, to better exploit the physical attributes of nanoscale phenomena for engineered nanosystems, we must be able to explore the phenomena much more precisely than can be done today. For instance, the atomic force microscope (AFM), which was one of the tools used to begin the nanotechnology revolution, is the force-deflection tool that is most widely used by nanotechnologist today. It is used to measure forces on the order of picoNewtons (similar to the force necessary to rupture DNA) and it is used as a positioner to measure displacements on the order of tenths of nanometers (similar to the size of atoms). However, precise calibration of the AFM is difficult (only about 1% precision), and it is not sensitive enough to measure more subtle nanoscale phenomena, e.g. forces involved in protein folding. Currently, the more subtle nanoscale phenomena are either beyond precise verification, or worse ­ beyond discovery. In this seminar, I will discus how my group will use microelectromechanical systems to 1) calibrate preexisting force-displacement tools such as the AFM in bending and in torsion; and 2) develop force-displacement tools that are several orders of magnitude more precise and more sensitive than convention. Bio Prof. Clark received his Ph.D. in Applied Science from the University of California at Berkeley, and his B.S. in physics from the California State University at Hayward. His research concerns the design, modeling, simulation, and verification of complex engineered systems. The overarching goal is to develop system-level computer-aided engineering and metrology tools to foster and accelerate advancement in tiny technologies for solving societal-scale problems. Application areas include robotics, health, safety, ecology, transportation, communication, etc. 3.2: Thursday, 02.22.07, 10:30 AM; BRK 1001: ³Heteroepitaxy on Nanoscale Substrates: Applications to Solid State Lightning and Vacuum Field Emission,² by Parijat Pramil Deb, Purdue University Abstract Thin film heterostructures are limited by a maximum critical thickness before introduction of extended defects. One- dimensional forms like nanowires/nanorods, due to the possibility of lateral elastic relaxation, can tolerate much larger lattice mismatch than their thin film counterparts. In this talk, I shall describe some modeling work employing solution thermodynamics and finite element analysis as a motivation to the nanoheteroepitaxy approach to achieve a monolithic phosphor free white light emitting diode (LED). A nanorod with a pointed tip morphology, will be shown to be required for pushing the emission wavelengths from the InN-GaN system to longer values (red). The talk will then proceed with the description of the process developed to synthesize diameter controlled GaN pyramidal tipped nanorods without the use of any catalysts. It will be shown that close control over the diameter variation on the same substrate can be achieved by a combination of the developed template based approach and optical lithographic techniques. Due to the large surface area to volume ratio of the synthesized nanorods, it is required to ascertain that the nanorods are not devoid of charge carriers due to the surface depletion effect. Electrical characterization results of the nanorods in the form of single and multiple GaN nanorod Schottky and p-n junctions diodes employing conductive atomic force microscopy will be presented. Finally, cathodoluminescence spectra from InGaN nanorods will be used to show the potential of the nanorod form to incorporate higher InN molefractions as compared to thin film counterparts. Along with applications in solid-state lighting, the pointed tip morphology of the nanorods, resulting in a very high field enhancement factor, are contenders as field emitters. Coupled with this, the incorporation of AlGaN on the nanorod tip helps to reduce the effective surface work function resulting in a significant reduction in the turn on field from AlGaN/GaN nanorod heterostructures. Such an approach circumvents the doping problem of AlGaN, still utilizing its low electron affinity property. Results from vacuum field emission experiments from AlGaN/GaN nanorod heterostructures and their analysis will also be presented in this talk. Bio Parijat Pramil Deb received his bachelors in "Metallurgical Engineering" from Pune Institue of Engineering and Technology (formerly known as Government College of Engineering, Pune), India. Subsequently, I went for the direct Ph.D proram in Dr. Tim Sands' group starting Fall 2002. I have been working on applications of nano- heteroepitaxy in solid state lighting. I have received the Purdue University Ross fellowship and also have been a recepient of the Applied Materials Inc. graduate fellowship for three years. I plan to graduate by April 2007 and will be joining Philips Lumileds, San Jose as a project leader in the technology transfer group starting May 2007. SPONSORED BY: Birck Nanotechnology Center, Bindley Bioscience Center, Discovery Park, The NASA Institute for Nanoelectronics and Computing, The Network for Computational Nanotechnology, VEECO, NCN Student Leadership Council, Department of Chemistry, Department of Physics, School of Chemical Engineering, School of Electrical and Computer Engineering, School of Mechanical Engineering 3.3: Thursday, 02.22.07, 10:30 AM; EE 317: ³The Semiconductor Industry¹s Nanoelectronics Research Initiative: Motivation and Challenges,² by Jeff Welser, Director, SRC Nanoeclectronics Research Initiative, IBM Almaden Research Center Abstract For over 35 years, the ability to achieve increased performance per dollar in microprocessor chips by scaling the dimensions of MOSFETs has been the driving engine behind the global semiconductor industry. Exponentially increasing power density due to leakage currents as well as active switching energy to these nanoscale transistors is, however, limiting our ability to reap benefits from continued scaling. We are now forced to trade-off performance and density for reduced power consumption, and hhence the fundamental physics of the CMOS transistor operation, rather than fabrication capability, will eventually be the ultimate limit. As the ultimate limits to the scaling of CMOS technology are getting closer, completely new approaches to emerging areas in electronics at the nanoscale need to be explored. Recognizing this critical challenge, the Nanoelectronics Research Initiative (NRI) was charted in 2005 by a consortium of Semiconductor Industry Associate (SIA member compaies to develop and administer a university-based program to address this issue. In this talk, the scaling challenges facing current CMOS technology will be discussed, along with the ultimate limits for charge-switching based devices. From this motivation, the current status of the NRI program will be discussed, with an overview of the current research topics being investigated at the NRI centers. Jeff Welser, bio Dr. Welser received his PhD in Electrical Engineering from Stanford University in 1995, and joined IBM¹s Research Division at the TJ Watson Research Center. His graduate work was focused on utilizing strained-Si and SiGe materials for FET devices. Since joining IBM, Jeff has worked on and managed a variety of projects involving novel devices. At IBM, Jeff has served as manager of the Novel Silicon Dvice group at Watson, project manager for the high-performance CMOS device design groups in the Microelectronics Division, director of high-performance SOI and BEOL technology development, Director Next Generation Technology Components. At the same time, he was the IBM Management Committee Member for Sony, Toshiba, and AMD development alliances. In 2006, Dr. Welser was named the Director of the Nanoelectronics Research Initiative, on assignment to the Semiconductor Research Corporatio (SRC), directing university-based research on future nanoscale logic devices to replace the CMOS transistor in the 2020 timeframe. He is based at the IBM Almaden Research Center in San Jose, CA. ************************ 4. Workshops and Conferences ************************ NONE ************************ 5. Fellowship/Job Opportunities ************************ NONE Deborah S. Starewich Administrative Assistant to Timothy D. Sands, Director Birck Nanotechnology Center Purdue University 765-494-3509 dstarewi@ecn.purdue.edu http://www.nano.purdue.edu/