Dear all,

Today's coffee hour will be from 3:30-4:00pm in the Birck Atrium. Today's presenter is Xingshu Sun. 

The title: "Channel Transmission Characteristics of Silicon Nanotransistors"

Abstract: The drain and gate voltage dependent channel transmission, T(Vgs, Vds), plays a key role in determining the IV characteristics of nanoscale field-effect transistors. In this paper, we report measurements of T(Vgs, Vds) for n-channel Extremely Thin Silicon-On-Insulator (ETSOI) MOSFETs with channel lengths from 30 to 980 nm.  The results confirm previously given estimates of  for low and high drain bias. In addition, they also provide a complete description over the range of biases of interest.  The results also show that for a given technology, the shape of T(Vgs, Vds) is independent of the channel length.

Hope to see you all there.

Best,