BIRCK NANOTECHNOLOGY CENTER http://www.purdue.edu/discoverypark/resources/toolkit/files/logo/digital/Logo-949x222.png

 

Seminars/Workshops

 

Cell Culture Basics – 2 Days Hands-On Training Course

November 16 & 17

Deadline for registration is Oct. 27, 2017

and

December 11 & 12

Deadline for registration is Nov. 17, 2017

Course fee: $250

Questions Dr. Tim Kwok at kwokt@purdue.edu or 765-494-6697

 

Taming amorphous oxides with ion beams to optimize optical interference coatings for demanding applications

Carmen S. Menoni, Professor at Colorado State University, Department of Electrical and Computer Engineering

Friday, November 10th

11:30 am

Burton D. Morgan Center, Room 129

http://www.purdue.edu/discoverypark/birck/events/index.php?view=1171

 

Bioelectronic Devices for Personalized and Precision Medicine: From Wearable Biosensors to Medical Nanorobots

Wei Gao, Assistant Professor of Medical Engineering, California Institute of Technology

November 13

2:00 p.m.

BRK 1001

http://www.purdue.edu/discoverypark/birck/events/index.php?view=1129

 

Bagwell X

Tenth Honorary Lecture

Counter-Intuitive Physics of Ballistic Transport in State of the Art Electronic Devices

Michael Shur, Rensselaer Polytechnic Institute

Friday, November 17 at 11:00 am – 12:00 pm

Burton D. Morgan Rm 121

http://www.purdue.edu/discoverypark/birck/events/index.php?view=959

 

VISION TO VALUES

Imaging Analysis Workshop

Thursday, November 30th

8:30 am – 3 pm

Dean’s Auditorium, Pfendler Hall

RSVP by November 21st at bindleybioscience@purdue.edu

 

See other Discovery Park’s Events:

http://www.purdue.edu/discoverypark/events/index.php

 

 


Professor Sabre Kais would like to announce CHM 696 Syllabus – Spring 2018

Graduate Research Assistantship Opportunity:

Deposited Gate Oxides for SiC MOSFETs

A graduate research assistantship is available in the area of silicon carbide metal-oxide-semiconductor

(MOS) devices. SiC is a wide bandgap semiconductor with a high critical field, making it an exciting material for power electronic devices. SiC MOSFETs are now commercially available, but do not yet achieve their full potential. Our group is approaching this problem from several directions, including a new device geometry inspired by modern FinFETs, the adaptation of IGBTs and super-junctions for use in SiC

devices, as well as alternative gate insulator fabrication methods.  If interested send email to morisett@purdue.edu

      

 

 


Status of laboratories link:

http://status.iLab.agilent.com

 

NSAC Coffee Hour

Each Friday

3:30 pm in BRK Atrium

https://engineering.purdue.edu/NSAC/activities/coffeehour

 

NSAC Journal Club

October 31

4:30 PM BNC Atrium