June 2016 - BNC-all - ecn.purdue.edu

CHE 666 - Methods in Catalysis
by Turner, Jaime J 09 Jul '16

09 Jul '16

Dear all, Please find attached the course description for CHE 666 – Methods in Catalysis taught by Dr. Dmitry Zemlyanov. Dr. Rosa Diaz will give two lectures about Microscopy. They will cover Photoemission and Auger Spectroscopy, Diffraction and EXAFS, Microscopy and Related Techniques, and The Vibrational Spectroscopies. Thank you Jaime Turner Birck Nanotechnology Center 1205 West State Street West Lafayette, IN 47907-2057 Email: jjturner(a)purdue.edu<mailto:jjturner@purdue.edu> Phone: 765-494-3509

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Reminder: NEEDS Seminar: James Teherani (Columbia) BRK 1001; Thursday, June 30, 10:30
by Johnson, Vicki L. 30 Jun '16

30 Jun '16

Auger generation as an intrinsic limit to tunneling field-effect transistor performance James Teherani Department of Electrical Engineering, Columbia University Birck 1001: Thursday, June 30 from 10:30-11:30 AM Abstract: Many in the microelectronics field view tunneling field-effect transistors (TFETs) as society’s best hope for achieving a > 10× power reduction for electronic devices; however, despite a decade of considerable worldwide research, experimental TFET results have significantly underperformed simulations and conventional MOSFETs. To explain the discrepancy between TFET experiments and simulations, we investigate the parasitic leakage current due to Auger generation, an intrinsic mechanism that cannot be mitigated with improved material quality or better device processing. We expose the intrinsic link between the Auger and band-to-band tunneling rates, highlighting the difficulty of increasing one without the other. From this link, we show that Auger generation imposes a fundamental limit on ultimate TFET performance.

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Mailroom label maker
by Totten, Mary J 28 Jun '16

28 Jun '16

If you have borrowed the label maker from the mailroom, could you please return it ASAP. There are other users that need to use it :) Thank you, Mary Jo Totten Birck Nanotechnology Center Discovery Park/Purdue University 1205 West State Street BRK 1220 West Lafayette, IN 47907-2057 (765) 496-1173 Life is 10% what happens to you and 90% how you react to it. Charles R. Swindoll

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NEEDS Seminar: James Teherani (Columbia) BRK 1001; Thursday, June 30, 10:30
by Johnson, Vicki L. 28 Jun '16

28 Jun '16

Auger generation as an intrinsic limit to tunneling field-effect transistor performance James Teherani Department of Electrical Engineering, Columbia University Birck 1001: Thursday, June 30 from 10:30-11:30 AM Abstract: Many in the microelectronics field view tunneling field-effect transistors (TFETs) as society’s best hope for achieving a > 10× power reduction for electronic devices; however, despite a decade of considerable worldwide research, experimental TFET results have significantly underperformed simulations and conventional MOSFETs. To explain the discrepancy between TFET experiments and simulations, we investigate the parasitic leakage current due to Auger generation, an intrinsic mechanism that cannot be mitigated with improved material quality or better device processing. We expose the intrinsic link between the Auger and band-to-band tunneling rates, highlighting the difficulty of increasing one without the other. From this link, we show that Auger generation imposes a fundamental limit on ultimate TFET performance.

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Pink Walrus Frozen Yogurt
by Anthrop, Heather L 28 Jun '16

28 Jun '16

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Birck Nanotechnology Center Hydrogen Supply
by Reger, Ronald K 27 Jun '16

27 Jun '16

Dear all Birck equipment users, This morning we discovered that the hydrogen generator in the Birck subfab has a defective/broken cooling fan and is therefore inoperable. A new fan is being ordered but until it arrives and can be installed we are on the back-up hydrogen supply from the tanks located out back near the LN2 system. No interruption of hydrogen should be seen, but if you have a particularly long process run that requires medium to high flow rates please get with Kenny Schwartz prior to your run so he can make sure we have ample supply for your process. We hope to have the fan repaired and the generator back online within 1 - 2 weeks. Thanks for your support. Birck Engineering

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BNC E-news for the week of June 27th
by Anthrop, Heather L 27 Jun '16

27 Jun '16

. We Welcome a New Staff Engineer! The Birck engineering staff welcomes Joon Park who is joining our team as a full-time staff member on Monday June 27th. Joon has a BS and MS in Mechanical Engineering, and he is completing his PhD at Purdue in ABE. Joon brings a wealth of knowledge and experience gained in his studies and in work assignments supporting major Korean auto manufacturers. Joon’s responsibilities will include a variety of instruments and control systems, and also processing services. We look forward to having Joon as a member of our team! Monday, June 27, 2016 @ 11:00am BRK, ROOM 1001 Subhasis Ghosh School of Physical Sciences, Jawaharlal Nehru University, New Delhi-110067 Email: subhasis.ghosh.jnu(a)gmail.com<mailto:subhasis.ghosh.jnu@gmail.com>, subhasis(a)mail.jnu.ac.in<mailto:subhasis@mail.jnu.ac.in> Title: Many Body Effects on Optical Properties of Graphene Abstract: Graphene, a two-dimensional (2D) material shows remarkable optical and electronic properties, such as a linear energy dispersion, chirality and half-integer quantum Hall effect. Multilayer graphene flakes, held together by weak van der Waals forces have also attracted attention due to their stacking dependent electronic and optical properties. Interestingly, a vast majority of these properties can be understood in terms of a non-interacting picture. In particular, the optical conductivity of monolayer graphene in the near infra-red and visible range has been found to be independent of frequency, and equal to e2/4ђ. From experimental investigations of the optical properties of chemically exfoliated mono and multilayered graphene flakes, we probe the effect of electron-electron interactions on the universal optical transmittance and excitons in graphene. The electron-electron or Coulomb interaction strength is varied both by modulating the dielectric constant of the exfoliating solvent, as well as changes in the carrier density. To vary the carrier density controllably, a method has been developed to dope (n-type and p-type) graphene monolayers through charge transfer interaction by trapping selected organic molecules between graphene and underneath substrates. Controllability has been demonstrated in terms of shift in Raman spectra and Dirac point in graphene monolayers. We find that the universality is robust throughout the visible range of the spectrum, and this is consistent with chiral symmetry as its origin. It has been shown that universality is broken if chiral symmetry can be broken. This is further supported by changes in the excitonic features which could disrupt the chiral symmetry. The shift and broadening of excitonic features are found to impact the onset of universality at low wavelengths. Our experiments also help to verify the theoretically predicted transmittance spectra in the presence of Coulomb interactions and resolve the discrepancy in the numerical factor governing the magnitude and frequency dependence of the transmittance in monolayer. [cid:image003.jpg@01D1D04E.20665960]

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REMINDER: NEEDS Seminar: Enrico Bellotti - Monday, June 27 from 3-4PM, BRK 2001
by Johnson, Vicki L. 27 Jun '16

27 Jun '16

Numerical Modeling of III-Nitride Semiconductors: >From Material Properties to Device Performance Enrico Bellotti Boston University Birck 2001: Monday, June 27 from 3:00-4:00PM Abstract: This talk presents the current research activities of the BU Computational Electronics Group, which are aimed at developing multi-scale modeling approaches for semiconductor materials and devices. The first part of this talk will discuss the application of this methodology in examining the breakdown properties of wide band gap semiconductors, in particular GaN and AlGaN. Starting from DFT-based electronic structure calculations and computing the carrier phonon interaction without including fitting parameters, it will be shown that it is possible to predict macroscopic device performance of avalanche photodetectors and power rectifiers. The second part of this talk will discuss the current research aimed at understanding the behavior of dislocations, defect formation and migration in GaN, their impact on the electronic and optical material properties, and ultimately device reliability. The work at Boston Univ. has been supported in part by the U.S. Army Research Laboratory through the Collaborative Research Alliance (CRA) for MultiScale multidisciplinary Modeling of Electronic materials (MSME), NSF, ARO, CERDEC-NVESD and DRS.

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REMINDER: Seminar Announcement: Subhasis Ghosh, BRK 1001, Monday, June 27 @ 11:00AM
by Johnson, Vicki L. 27 Jun '16

27 Jun '16

Monday, June 27, 2016 @ 11:00am BRK, ROOM 1001 Subhasis Ghosh School of Physical Sciences, Jawaharlal Nehru University, New Delhi-110067 Email: subhasis.ghosh.jnu(a)gmail.com<mailto:subhasis.ghosh.jnu@gmail.com>, subhasis(a)mail.jnu.ac.in<mailto:subhasis@mail.jnu.ac.in> Title: Many Body Effects on Optical Properties of Graphene Abstract: Graphene, a two-dimensional (2D) material shows remarkable optical and electronic properties, such as a linear energy dispersion, chirality and half-integer quantum Hall effect. Multilayer graphene flakes, held together by weak van der Waals forces have also attracted attention due to their stacking dependent electronic and optical properties. Interestingly, a vast majority of these properties can be understood in terms of a non-interacting picture. In particular, the optical conductivity of monolayer graphene in the near infra-red and visible range has been found to be independent of frequency, and equal to e2/4ђ. From experimental investigations of the optical properties of chemically exfoliated mono and multilayered graphene flakes, we probe the effect of electron-electron interactions on the universal optical transmittance and excitons in graphene. The electron-electron or Coulomb interaction strength is varied both by modulating the dielectric constant of the exfoliating solvent, as well as changes in the carrier density. To vary the carrier density controllably, a method has been developed to dope (n-type and p-type) graphene monolayers through charge transfer interaction by trapping selected organic molecules between graphene and underneath substrates. Controllability has been demonstrated in terms of shift in Raman spectra and Dirac point in graphene monolayers. We find that the universality is robust throughout the visible range of the spectrum, and this is consistent with chiral symmetry as its origin. It has been shown that universality is broken if chiral symmetry can be broken. This is further supported by changes in the excitonic features which could disrupt the chiral symmetry. The shift and broadening of excitonic features are found to impact the onset of universality at low wavelengths. Our experiments also help to verify the theoretically predicted transmittance spectra in the presence of Coulomb interactions and resolve the discrepancy in the numerical factor governing the magnitude and frequency dependence of the transmittance in monolayer.

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NEEDS Seminar: Enrico Bellotti - Monday, June 27 from 3-4PM, BRK 2001
by Johnson, Vicki L. 24 Jun '16

24 Jun '16

Numerical Modeling of III-Nitride Semiconductors: >From Material Properties to Device Performance Enrico Bellotti Boston University Birck 2001: Monday, June 27 from 3:00-4:00PM Abstract: This talk presents the current research activities of the BU Computational Electronics Group, which are aimed at developing multi-scale modeling approaches for semiconductor materials and devices. The first part of this talk will discuss the application of this methodology in examining the breakdown properties of wide band gap semiconductors, in particular GaN and AlGaN. Starting from DFT-based electronic structure calculations and computing the carrier phonon interaction without including fitting parameters, it will be shown that it is possible to predict macroscopic device performance of avalanche photodetectors and power rectifiers. The second part of this talk will discuss the current research aimed at understanding the behavior of dislocations, defect formation and migration in GaN, their impact on the electronic and optical material properties, and ultimately device reliability. The work at Boston Univ. has been supported in part by the U.S. Army Research Laboratory through the Collaborative Research Alliance (CRA) for MultiScale multidisciplinary Modeling of Electronic materials (MSME), NSF, ARO, CERDEC-NVESD and DRS.

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